Solid-state imaging device, method for driving the same, and electronic device for improved autofocusing accuracy

ABSTRACT

The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/201,583, filed Nov. 27, 2018, which is a continuation of U.S. patentapplication Ser. No. 15/508,181, filed Mar. 2, 2017, which claims thebenefit of PCT Application No. PCT/JP2015/074134 having an internationalfiling date of 27 Aug. 2015, which designated the United States, whichPCT application claimed the benefit of Japanese Patent Application No.2014-183885 filed 10 Sep. 2014, the disclosures of which areincorporated herein by reference in their entirety.

TECHNICAL FIELD

The present disclosure relates to a solid-state imaging device, a methodfor driving the solid-state imaging device, and an electronic device,and more particularly, to a solid-state imaging device, a method fordriving the solid-state imaging device, and an electronic device capableof improving auto-focusing accuracy by using a phase difference signalobtained by using a photoelectric conversion film.

BACKGROUND ART

As a method of performing auto-focusing in an imaging device such as adigital camera, there is known a split-pupil phase difference detectionmethod using a focus detection pixel of which sensitivity is asymmetrywith respect to an incident angle of light. In addition, as asplit-pupil phase difference detection method implemented by asolid-state imaging device, there is a technique disclosed in, forexample, Patent Document 1. Patent Document 1 discloses a structureprovided with a photodiode which acquires a signal for image generationby using a photoelectric conversion film provided above a siliconsubstrate and acquires a signal for phase difference detection in thesilicon substrate.

CITATION LIST Patent Document

-   Patent Document 1: Japanese Patent Application Laid-Open No.    2011-103335

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

However, in such a structure, since light incident on the photodiode islight which is not absorbed by the photoelectric conversion film butpasses through the photoelectric conversion film, the intensity of theincident light is weak, and thus, sensitivity of light reception is low.For this reason, it is difficult to obtain high auto-focusing accuracy.

The present disclosure is to improve auto-focusing accuracy by using aphase difference signal obtained by using a photoelectric conversionfilm.

A solid-state imaging device of a first aspect of the present disclosureincludes a pixel including a photoelectric conversion portion having astructure where a photoelectric conversion film is interposed by anupper electrode on the photoelectric conversion film and a lowerelectrode under the photoelectric conversion film, wherein the upperelectrode is divided into a first upper electrode and a second upperelectrode.

A method for driving a solid-state imaging device of a second aspect ofthe present disclosure includes a pixel including a photoelectricconversion portion having a structure where a photoelectric conversionfilm is interposed by an upper electrode on the photoelectric conversionfilm and a lower electrode under the photoelectric conversion film, theupper electrode being divided into a first upper electrode and a secondupper electrode, and the solid-state imaging device applies differentvoltages to the first upper electrode and the second upper electrode.

An electronic device of a third aspect of the present disclosureincludes a solid-state imaging device including a pixel including aphotoelectric conversion portion having a structure where aphotoelectric conversion film is interposed by an upper electrode on thephotoelectric conversion film and a lower electrode under thephotoelectric conversion film, the upper electrode being divided into afirst upper electrode and a second upper electrode.

Solutions to Problems

In a first to third aspects of the present disclosure, in a pixelincluding a photoelectric conversion portion having a structure where aphotoelectric conversion film is interposed by an upper electrode on thephotoelectric conversion film and a lower electrode under thephotoelectric conversion film, the upper electrode is divided into afirst upper electrode and a second upper electrode.

In a second aspect of the present disclosure, in a solid-state imagingdevice including a pixel including a photoelectric conversion portionhaving a structure where a photoelectric conversion film is interposedby an upper electrode on the photoelectric conversion film and a lowerelectrode under the photoelectric conversion film, the upper electrodebeing divided into a first upper electrode and a second upper electrode,different voltages are applied to the first upper electrode and thesecond upper electrode.

The solid-state imaging device and the electronic device may beindependent devices or may be a module which is to be incorporated intoother devices.

Effects of the Invention

According to the first to third aspects of the present disclosure, it ispossible to improve auto-focusing accuracy by using a phase differencesignal obtained by using a photoelectric conversion film.

In addition, the effects disclosed herein are not necessarily limited,but any one of the effects disclosed in the present disclosure may beobtained.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a block diagram illustrating a first embodiment of asolid-state imaging device according to the present disclosure.

FIG. 2 is a cross-sectional structure diagram illustrating a firstconfiguration example of a pixel in the first embodiment.

FIG. 3 is a plan view illustrating a planar shape of an upper electrode.

FIG. 4 is a plan view illustrating another planar shape of the upperelectrode.

FIG. 5 is a plan view illustrating still another planar shape of theupper electrode.

FIG. 6 is a diagram describing a first driving method of acquiring aphase difference signal in the first configuration example.

FIG. 7 is a diagram describing a driving method of acquiring an imagesignal in the first configuration example.

FIG. 8 is a diagram describing a second driving method of acquiring aphase difference signal in the first configuration example.

FIG. 9 is a diagram describing a second driving method of acquiring aphase difference signal in the first configuration example.

FIG. 10 is a cross-sectional structure diagram illustrating a secondconfiguration example of a pixel in the first embodiment.

FIG. 11 is a diagram describing a driving method of acquiring a phasedifference signal in the second configuration example.

FIG. 12 is a cross-sectional structure diagram illustrating a thirdconfiguration example of a pixel in the first embodiment.

FIG. 13 is a diagram describing a driving method of acquiring a phasedifference signal in the third configuration example.

FIG. 14 is a diagram describing a driving method of acquiring an imagesignal in the third configuration example.

FIG. 15 is a cross-sectional structure diagram illustrating a fourthconfiguration example of a pixel in the first embodiment.

FIG. 16 is a diagram describing a driving method of acquiring a phasedifference signal in the fourth configuration example.

FIG. 17 is a diagram describing a driving method of acquiring an imagesignal in the fourth configuration example.

FIG. 18 is a circuit diagram of a phase difference pixel in the case ofperforming an addition process in the phase difference pixel.

FIG. 19 is a cross-sectional structure diagram illustrating a fifthconfiguration example of a pixel in the first embodiment.

FIG. 20 is a diagram describing a first driving method of acquiring aphase difference signal in the fifth configuration example.

FIG. 21 is a diagram describing a driving method of acquiring an imagesignal in the fifth configuration example.

FIG. 22 is a diagram describing a second driving method of acquiring aphase difference signal in the fifth configuration example.

FIG. 23 is a diagram describing a second driving method of acquiring aphase difference signal in the fifth configuration example.

FIG. 24 is a cross-sectional structure diagram illustrating a sixthconfiguration example of a pixel in the first embodiment.

FIG. 25 is a block diagram illustrating a configuration example of animaging device as an electronic device according to the presentdisclosure.

FIG. 26 is a block diagram illustrating a second embodiment of asolid-state imaging device according to the present disclosure.

FIG. 27 is a cross-sectional structure diagram illustrating a firstconfiguration example of a pixel in the second embodiment.

FIG. 28 is a diagram describing light reception angle distributioncharacteristics.

FIG. 29 is a cross-sectional structure diagram illustrating a secondconfiguration example of a pixel in the second embodiment.

FIG. 30 is a cross-sectional structure diagram illustrating a thirdconfiguration example of a pixel in the second embodiment.

FIG. 31 is a cross-sectional structure diagram illustrating a fourthconfiguration example of a pixel in the second embodiment.

FIG. 32 is a cross-sectional structure diagram illustrating a fifthconfiguration example of a pixel in the second embodiment.

FIG. 33 is a diagram describing an example of arrangement of a phasedifference pixel.

FIG. 34 is a diagram describing an example of arrangement of a phasedifference pixel.

FIG. 35 is a flowchart describing a focus control process.

FIG. 36 is a diagram describing a substrate configuration example of asolid-state imaging device.

MODE FOR CARRYING OUT THE INVENTION

Hereinafter, modes (hereinafter, referred to as embodiments) forcarrying out the present disclosure will be described. In addition, thedescription will be made in the following order.

1. First Embodiment of Solid-State Imaging Device

2. First Configuration Example of Pixel (configuration example whereupper electrodes of phase difference pixels are divided)

3. Second Configuration Example of Pixel (configuration example whereadjacent upper electrodes of phase difference pixels are continuous witheach other)

4. Third Configuration Example of Pixel (configuration example whereupper electrodes of normal pixels are also divided)

5. Fourth Configuration Example of Pixel (configuration example wherelower electrodes of phase difference pixels are also divided)

6. Fifth Configuration Example of Pixel (upper electrodes and lowerelectrodes of entire pixels are divided)

7. Sixth Configuration Example of Pixel (configuration example wherepixels have color filters)

8. Example of Application to Electronic Device

9. Second Embodiment of Solid-State Imaging Device

10. First Configuration Example of Pixel (configuration example wherelower electrode is formed in one-side half)

11. Second Configuration Example of Pixel (configuration example whereupper electrode and photoelectric conversion film are also formed inone-side half)

12. Third Configuration Example of Pixel (configuration example whereunnecessary charges of photoelectric conversion portion for green aredischarged)

13. Fourth Configuration Example of Pixel (configuration example whereheight of photoelectric conversion portion for green is changed)

14. Fifth Configuration Example of Pixel (configuration example wheretwo photoelectric conversion portions are formed)

15. Arrangement Example of Phase Difference Pixel

16. Focus Control Process

17. Substrate Configuration Example of Solid-State Imaging Device

1. First Embodiment of Solid-State Imaging Device

FIG. 1 is a block diagram illustrating a first embodiment of asolid-state imaging device according to the present disclosure.

A solid-state imaging device 1 of FIG. 1 is configured to include apixel array portion 3 where pixels 2 are two-dimensionally arranged in amatrix shape on a semiconductor substrate 12 using a semiconductor suchas silicon (Si) and a peripheral circuit portion in the periphery of thepixel array portion 3. The peripheral circuit portion includes avertical driver circuit 4, a column signal processing circuit 5, ahorizontal driver circuit 6, an output circuit 7, a control circuit 8,and the like.

The pixels 2 generate pixel signals according to a light amount ofincident light and output the pixel signals. As described later withreference to FIG. 2 and the like, the pixels 2 include normal pixels 2Xgenerating a signal for image generation and phase difference pixels 2Pgenerating a signal for focus detection, and at least a portion of thepixels 2 in the pixel array portion 3 become the phase difference pixels2P. In addition, hereinafter, the signal for image generation outputfrom the normal pixel 2X is referred to as an image signal, and thesignal for focus detection output from the phase difference pixel 2P isreferred to as a phase difference signal.

The pixel 2 is configured to include a photoelectric conversion portionusing a photodiode or a photoelectric conversion film and a plurality ofpixel transistors (so-called MOS transistors). The plurality of pixeltransistors are configured with, for example, four MOS transistors of atransfer transistor, a selection transistor, a reset transistor, and anamplification transistor.

In addition, the pixel 2 may also be configured with a shared pixelstructure. The shared pixel structure is configured with a plurality ofphotoelectric conversion portions, a plurality of transfer transistors,one shared floating diffusion region, and each shared one of other pixeltransistors. Namely, in the shared pixel structure, the photoelectricconversion portions and the transfer transistors constituting aplurality of unit pixels are configured to share each one of other pixeltransistors.

The control circuit 8 receives an input clock and data instructing anoperation mode or the like and outputs data such as internal informationof the solid-state imaging device 1. Namely, the control circuit 8generates a clock signal or a control signal used as a reference ofoperations of the vertical driver circuit 4, the column signalprocessing circuit 5, the horizontal driver circuit 6, and the like onthe basis of a vertical synchronization signal, a horizontalsynchronization signal, and a master clock. The control circuit 8 thenoutputs the generated clock signal or control signal to the verticaldriver circuit 4, the column signal processing circuit 5, the horizontaldriver circuit 6, and the like.

The vertical driver circuit 4 is configured with, for example, shiftregisters to select a pixel driving wire line 10, supply a pulse fordriving the pixels 2 to the selected pixel driving wire line 10, anddrive the pixels 2 in unit of a row. Namely, the vertical driver circuit4 selectively scans each pixel 2 of the pixel array portion 3 in unit ofa row sequentially in the vertical direction and supplies the pixelsignal based on signal charges generated according to a light receptionamount of the photoelectric conversion portion of each pixel 2 through avertical signal line 9 to the column signal processing circuit 5.

The column signal processing circuit 5 is arranged for every column ofthe pixels 2 and performs a signal process such as noise removal forevery pixel column on the signals output from the pixels 2 of one row.For example, the column signal processing circuit 5 performs signalprocesses such as correlated double sampling (CDS) for removing fixedpattern noise specific to the pixel and AD conversion.

The horizontal driver circuit 6 is configured with, for example, shiftregisters and sequentially outputs horizontal scan pulses tosequentially select each column signal processing circuit 5 to alloweach column signal processing circuit 5 to output the pixel signal to ahorizontal signal line 11.

The output circuit 7 performs a signal process on the signalssequentially supplied through the horizontal signal line 11 from eachcolumn signal processing circuit 5 and outputs the signals. In somecases, the output circuit 7 may perform, for example, only buffering, orin other cases, the output circuit may perform various digital signalprocesses such as black level adjustment and column variationcorrection. An input/output terminal 13 exchanges signals with theoutsides.

The solid-state imaging device 1 having the above-describedconfiguration is a CMOS image sensor referred to as a column AD methodwhere column signal processing circuits 5 performing a CDS process andan AD conversion process are arranged for every pixel column.

2. First Configuration Example of Pixel

<2.1 Cross-Sectional Structure Diagram of Pixel>

A first configuration example of the pixel 2 of the solid-state imagingdevice 1 according to the first embodiment will be described withreference to FIG. 2.

FIG. 2 illustrates a cross-sectional structure of four pixels 2including two normal pixels 2X and two phase difference pixels 2P.

The normal pixel 2X is a pixel which can output only an image signal. Onthe other hand, the phase difference pixel 2P is a pixel which canoutput a phase difference signal for focus detection as well as theimage signal. In addition, since the phase difference pixels 2P arearranged as a pair of pixels comparing phase difference in the pixelarray portion 3, in FIG. 2, the pair of pixels is illustrated as phasedifference pixels 2P_(A) and 2P_(B).

In addition, in FIG. 2, for the convenience, in the order from the leftside, the normal pixel 2X, the phase difference pixel 2P_(A), the phasedifference pixel 2P_(B), and the normal pixel 2X are arranged to bealigned in this order. However, the arrangement of the pixels 2 in thepixel array portion 3 may be arbitrarily determined, and the arrangementis not limited to this example.

In the description of FIG. 2, first, the pixel structure of the normalpixel 2X will be described, and after that, with respect to the phasedifference pixel 2P_(A) and the phase difference pixel 2P_(B), only theportions different from those of the normal pixel 2X will be described.

The pixel structure of the normal pixel 2X is described.

By stacking second conductive type (for example, N type) semiconductorregions 42 and 43 in the depth direction in a first conductive type (forexample, p type) semiconductor region 41 of the semiconductor substrate12, photodiodes PD1 and PD2 are formed in the depth direction by PNjunction. The photodiode PD1 having the semiconductor region 42 as acharge storage region is a photoelectric conversion portion whichreceives and photoelectrically converts blue light and, and thephotodiode PD2 having the semiconductor region 43 as a charge storageregion is a photoelectric conversion portion which receives andphotoelectrically converts red light.

In the front surface side (lower side in the figure) of thesemiconductor substrate 12, a plurality of pixel transistors performingreading or the like of charges stored in the photodiodes PD1 and PD2 anda multi-layered wire line layer including a plurality of wire linelayers and interlayer insulating films are formed. However, thesecomponents are omitted in illustration of FIG. 2.

In the semiconductor substrate 12, conductive plugs 44 for extractingcharges photoelectrically converted by the later-described photoelectricconversion film 52 to the substrate front surface side (lower side inthe figure) are formed to penetrate the semiconductor substrate 12(semiconductor region 41 thereof). In addition, although notillustrated, outer circumferences of the conductive plug 44 areinsulated by an insulating film of SiO2, SiN, or the like.

The conductive plug 44 is connected to a charge retaining portion 45formed by the second conductive type (for example, N type) semiconductorregion in the semiconductor region 41. The charge retaining portion 45temporarily retains the charges photoelectrically converted by thephotoelectric conversion film 52 until the charges are read.

On the interface of the back surface side (upper side in the figure) ofthe semiconductor substrate 12, for example, a transparent insulatingfilm 51 configured with two-layered or three-layered film of a hafniumoxide (HfO2) film or a silicon oxide film is formed.

Above the transparent insulating film 51, the photoelectric conversionfilm 52 is arranged in a form to be interposed by a lower electrode 53 ain the lower side thereof and an upper electrode 54 a in the upper sidethereof. The photoelectric conversion film 52, the lower electrode 53 a,and the upper electrode 54 a constitute a photoelectric conversionportion. The photoelectric conversion film 52 is a filmphotoelectrically converting green wavelength light and is formed with,for example, an organic photoelectric conversion material including arhodamine based dye, a melacyanine based dye, quinacridone, and thelike. The lower electrode 53 a and the upper electrode 54 a are formedwith, for example, a transparent electrode film such as an indium tinoxide (ITO) film or an indium zinc oxide film.

In addition, in the case of having the photoelectric conversion film 52as a film photoelectrically converting red wavelength light, forexample, an organic photoelectric conversion material including aphthalocyanine based dye may be used. In addition, in the case of havingthe photoelectric conversion film 52 as a film photoelectricallyconverting blue wavelength light, an organic photoelectric conversionmaterial including a coumarin based dye, tris-8-hydrioxyquinoline Al(Alq3), a melacyanine based dye, and the like may be used.

Both of the lower electrode 53 a and the upper electrode 54 a in thenormal pixel 2X are formed in unit of a pixel. The lower electrode 53 ais connected to the conductive plug 44 of the semiconductor substrate 12by a metal wire line 55 penetrating the transparent insulating film 51.The metal wire line 55 is formed with, for example, a material such astungsten (W), aluminum (Al), or copper (Cu).

On the upper electrode 54 a, a high refractive index layer 56 is formedby using an inorganic film such as a silicon nitride film (SiN), asilicon oxynitride film (SiON), and a silicon carbide (SiC) film. Inaddition, on the high refractive index layer 56, on-chip lenses 57 areformed. As a material of the on-chip lens 57, for example, a siliconnitride film (SiN) or a resin based material of a styrene based resin,an acrylic resin, a styrene-acrylic copolymer resin, a siloxane basedresin, or the like is used. In the pixel structure, since the distancebetween the photoelectric conversion film 52 and the on-chip lens 57becomes small, the phase difference pixels 2P_(A) and 2P_(B) are hard tohave dependency on the light incident angle. Therefore, in the highrefractive index layer 56, the refraction angle is increased, and thus,there is an effect of increasing light collection efficiency. The highrefractive index layer 56 and the on-chip lens 57 may be formed with thesame material.

The normal pixels 2X have the configuration described heretofore.

Therefore, the solid-state imaging device 1 where the above-describednormal pixels 2X are two-dimensionally arranged is a back-illuminatedtype CMOS solid-state imaging device where light is incident from theback surface side opposite to the front surface side of thesemiconductor substrate 12 where the pixel transistors are formed.

In addition, the solid-state imaging device 1 is a verticalspectroscopic solid-state imaging device where green light isphotoelectrically converted by the photoelectric conversion film 52formed outside the semiconductor substrate (silicon layer) 12 and bluelight and red light are photoelectrically converted by the photodiodesPD1 and PD2 in the semiconductor substrate 12.

Next, the pixel structure of the phase difference pixel 2P (2P_(A) and2P_(B)) will be described. In addition, in the description of the pixelstructure of the phase difference pixel 2P, only the portions differentfrom those of the normal pixel 2X will be described.

The phase difference pixel 2P is different from the normal pixel 2X interms that the upper electrode 54 a is formed in unit of pixel in thenormal pixel 2X and two divided upper electrodes of the first upperelectrode 54 b and the second upper electrode 54 c are formed in thephase difference pixel. The other structures of the phase differencepixel 2P are similar to those of the normal pixel 2X.

In addition, hereinafter, if there is no need to distinguish the upperelectrode 54 a, the first upper electrode 54 b, and the second upperelectrode 54 c, each of the upper electrodes is simply referred to as anupper electrode 54.

FIG. 3 is a plan view illustrating a planar shape of the upper electrode54.

As illustrated in FIG. 3, the upper electrode 54 a of the normal pixel2X is formed to be one rectangular region in the pixel, and the upperelectrodes in the phase difference pixel 2P are formed to be two upperelectrodes of the first upper electrode 54 b and the second upperelectrode 54 c divided in the horizontal direction (left-right directionof the paper).

As illustrated in FIG. 3, the upper electrode 54 a, the first upperelectrode 54 b, and the second upper electrode 54 c are connected withrespective control wire lines 61 for applying predetermined biasvoltages. Specifically, the upper electrode 54 a is connected with acontrol wire line 61 a for applying a predetermined bias voltage, thefirst upper electrode 54 b is connected with a control wire line 61 bfor applying a predetermined bias voltage, and the second upperelectrode 54 c is connected with a control wire line 61 c for applying apredetermined bias voltage. Therefore, since the first upper electrode54 b and the second upper electrode 54 c are each provided with thecontrol wire line 61, the control wire line 61 can apply different biasvoltages to the first upper electrode 54 b and the second upperelectrode 54 c in the same pixel.

The wire line positions of the control wire lines 61 and the contactpositions between the control wire lines 61 and the upper electrodes 54are defined so as not to prevent photoelectric conversion of thephotoelectric conversion film 52 if possible, in other words, so as notto prevent light from being incident on the photoelectric conversionfilm 52.

In addition, in the example of FIG. 3, in the phase difference pixel 2P,the first upper electrode 54 b and the second upper electrode 54 c areformed as two upper electrodes divided in the horizontal direction(left-right direction of the paper). However, as illustrated in FIG. 4,the first upper electrode and the second upper electrode may be formedas two upper electrodes divided in the vertical direction (up-downdirection of the paper). In addition, as illustrated in FIG. 5, thefirst upper electrode and the second upper electrode may be formed astwo upper electrodes divided in the diagonal direction (obliquedirection of the paper).

Although the upper electrodes 54 a of the normal pixels 2X are formed tobe separated for every pixel, there is no need to separate the upperelectrodes for every pixel, but the upper electrodes may be formed to becontinuous with those of the adjacent normal pixels 2X. Since thephotoelectric conversion region of the photoelectric conversion film 52becomes a region interposed by the upper electrode 54 a and the lowerelectrode 53 a and the lower electrodes 53 a are separated in unit of apixel, there is no problem even in a case where the upper electrodes areformed to be continuous with those of the adjacent normal pixels 2X.

In FIGS. 4 and 5, the control wire line 61 is omitted. However, thecontrol wire line 61 may be arranged so that the upper electrode 54 a,the first upper electrode 54 b, and the second upper electrode 54 c canbe independently controlled.

In addition, in FIGS. 3 to 5, the phase difference pixels 2P includingthe first upper electrode 54 b and the second upper electrode 54 c arearranged to be aligned in a certain direction such as the verticaldirection, the horizontal direction, or the diagonal direction. However,the phase difference pixels 2P may be arranged at random inside thepixel array portion 3. In addition, inside the pixel array portion 3,the phase difference pixels 2P where the first upper electrode 54 b andthe second upper electrode 54 c are divided in the horizontal direction,the phase difference pixels 2P where the first upper electrode 54 b andthe second upper electrode 54 c are divided in the vertical direction,and the phase difference pixels 2P where the first upper electrode 54 band the second upper electrode 54 c are divided in the diagonaldirection may be arranged to be mixed.

Namely, in the present disclosure, the arrangement of the phasedifference pixels 2P and the arrangement and shape of the first upperelectrode 54 b and the second upper electrode 54 c inside the phasedifference pixel 2P are not limited, and inside the phase differencepixel 2P, the region of the first upper electrode 54 b and the region ofthe second upper electrode 54 c are asymmetric with respect to theoptical axis of the incident light, and the first upper electrode 54 bof the phase difference pixel 2P_(A) and the second upper electrode 54 cof the phase difference pixel 2P_(B) constituting a pair of pixels maybe arranged to be symmetric with each other.

In the signal obtained from the region of the first upper electrode 54 bof the phase difference pixel 2P_(A) and the signal obtained from theregion of the second upper electrode 54 c of the phase difference pixel2P_(B), due to the difference of the formation positions of the upperelectrodes 54, a deviation of the image occurs. A defocus amount iscalculated by calculating a phase shift amount from the deviation of theimage, and the image forming lens is adjusted (moved), so that it ispossible to achieve auto-focusing.

In addition, in a case where the first upper electrode 54 b and thesecond upper electrode 54 c in one phase difference pixel 2P arearranged to be symmetric with each other, one set of phase differencesignals can be acquired from only one phase difference pixel 2P.

In addition, in the pixel structure illustrated in FIG. 2, thephotoelectric conversion film 52 uses the G signal output from the phasedifference pixel 2P as the signal for focus detection in order tophotoelectrically convert the green light, and it is possible toarbitrarily select which color light to be photoelectrically convertedby the photoelectric conversion film 52. Namely, in the verticalspectroscopic solid-state imaging device, it is possible toappropriately determine which color light to be photoelectricallyconverted by the photoelectric conversion film 52 formed outside thesemiconductor substrate 12 and which color light to be photoelectricallyconverted by the photodiodes PD1 and PD2 in the semiconductor substrate12.

<2.2 First Driving Method in Phase Difference Signal Acquisition Period>

Next, a first driving method of acquiring the phase difference signal inthe pixel 2 according to the first configuration example will bedescribed with reference to FIG. 6.

FIG. 6 is a diagram illustrating a method of setting a bias voltage tothe upper electrode 54 of each pixel 2 in the case of acquiring thephase difference signal.

In the case of acquiring the phase difference signal, as illustrated inFIG. 6, in the phase difference pixel 2P_(A) of the phase differencepixels 2P_(A) and 2P_(B) constituting a pair of pixels, a high biasvoltage is applied to the first upper electrode 54 b, and a low biasvoltage is applied to the second upper electrode 54 c.

On the other hand, in the phase difference pixel 2P_(B) of the phasedifference pixels 2P_(A) and 2P_(B) constituting a pair of pixels, a lowbias voltage is applied to the first upper electrode 54 b, and a highbias voltage is applied to the second upper electrode 54 c.

In a case where a high bias voltage is applied to the upper electrode54, charges are generated according to the light incident on the region(photoelectric conversion region) of the photoelectric conversion film52 interposed by the upper electrode 54 and the lower electrode 53 a. Onthe other hand, in a case where a low bias voltage is applied to theupper electrode 54, although light is incident on the photoelectricconversion film 52, no charge is generated.

Therefore, in the phase difference pixel 2P_(A), a signal (hereinafter,referred to as a left opening signal) obtained by photoelectricconversion in the left-half photoelectric conversion region in the pixelcan be acquired, and in the phase difference pixel 2P_(B), a signal(hereinafter, referred to as a right opening signal) obtained byphotoelectric conversion in the right-half photoelectric conversionregion in the pixel can be acquired. Namely, in the phase differencepixels 2P_(A) and 2P_(B) constituting a pair of pixels, since one set ofphase difference signals of the photoelectric conversion regions havinga position relationship of being symmetric with respect to the opticalaxis can be acquired, the defocus amount is calculated by detecting thephase difference of the two signals, and the image forming lens isadjusted (moved), so that it is possible to achieve auto-focusing.

In addition, in the example of FIG. 6, a high bias voltage is alsoapplied to the upper electrode 54 a of the normal pixel 2X, and thus,the signal can be acquired from the normal pixel 2X, but the signal ofthe normal pixel 2X is not used. Therefore, in the case of acquiring thephase difference signal, a low bias voltage may be applied to the upperelectrode 54 a of the normal pixel 2X.

<2.3 Driving Method in Image Signal Acquisition Period>

Next, a driving method of acquiring the image signal in the pixel 2according to the first configuration example will be described withreference to FIG. 7.

FIG. 7 is a diagram illustrating a method of setting a bias voltage tothe upper electrode 54 of each pixel 2 in the case of acquiring theimage signal.

In the case of acquiring the image signal, as illustrated in FIG. 7, inany one of the phase difference pixels 2P_(A) and 2P_(B) constituting apair of pixels, a high bias voltage is applied to the first upperelectrode 54 b and the second upper electrode 54 c. In addition, a highbias voltage is also applied to the upper electrode 54 a of the normalpixel 2X.

The total area of the first upper electrode 54 b and the second upperelectrode 54 c in the phase difference pixel 2P is almost equal to thearea of the upper electrode 54 a of the normal pixel 2X, and a similarsignal to that of the normal pixel 2X can also be output from the phasedifference pixel 2P.

By doing so, in the entire pixels of the phase difference pixel 2P andthe normal pixel 2X in the pixel array portion 3, the image signal canbe generated and output.

The control of the bias voltage to each upper electrode 54 of the phasedifference pixel 2P and the normal pixel 2X is performed by, forexample, the vertical driver circuit 4. The timing of acquiring thephase difference signal can be determined arbitrarily. For example,contrary to the acquisition of the image signal in several frames, thephase difference signal may be acquired with a rate of one time, and theacquisition of the image signal and the acquisition of the phasedifference signal may be alternately performed.

As described above, according to the first configuration example of thepixel 2 in the solid-state imaging device 1, in the phase differencesignal acquisition period, in the phase difference pixels 2P_(A) and2P_(B) constituting a pair of pixels, a bias voltage is applied to theupper electrodes 54 so that one set of phase difference signalsincluding the left opening signal corresponding to the first upperelectrode 54 b and the right opening signal corresponding to the secondupper electrode 54 c is obtained.

In addition, in the image signal acquisition period, a bias voltage isapplied to the upper electrodes 54 so that the image signal is obtainedin the entire pixels of the phase difference pixel 2P and the normalpixel 2X in the pixel array portion 3.

Therefore, the phase difference can be detected at a high sensitivity byusing the photoelectric conversion film 52 (photoelectric conversionportion) provided outside the semiconductor substrate 12, it is possibleto improve auto-focusing accuracy. In addition, it is possible to obtainthe phase difference signal by only controlling the bias voltage appliedto the upper electrode 54, and in the case of acquiring an image signal,an image signal similar to a normal pixel 2X can be generated from thephase difference pixel 2P. In other words, the phase difference pixel 2Pdoes not become a defective pixel, and an image signal can also beacquired from the phase difference pixel 2P.

In addition, in the above-described driving in the phase differencesignal acquisition period, in one phase difference pixel 2P, a high biasvoltage is applied to one of the first upper electrode 54 b and thesecond upper electrode 54 c, and a low bias voltage is applied to theother upper electrode. In this case, when the potential of the lowerelectrode 53 a is changed by the charges output from the photoelectricconversion film 52 corresponding to the upper electrode 54 (one of thefirst upper electrode 54 b and the second upper electrode 54 c) of theside where the high bias voltage is applied, a potential differencebetween the upper electrode 54 (the other of the first upper electrode54 b and the second upper electrode 54 c) of the side where the low biasvoltage is applied and the lower electrode 53 a is increased, and thus,there may be a problem in that leak current flows to the region of theside where the low bias voltage is applied.

Since the current amount of the leak current is very small, the leakcurrent does not influence the image. However, in order to suppress theleak current as much as possible, the potential of the upper electrode54 of the side where the low bias voltage is applied may be changedaccording to the change in the potential of the lower electrode 53 a ofthe side where the charges are stored. Namely, the potential of theupper electrode 54 of the side where the low bias voltage is applied maybe changed so that the potential difference between the upper electrode54 of the side where the low bias voltage is applied and the lowerelectrode 53 a is constant. In order to implement this control, added isa voltage control circuit which monitors the potential of the chargeretaining portion 45 and changes the voltage applied to the upperelectrode 54 of the side where the low bias voltage is applied accordingto the potential of the charge retaining portion 45.

<2.4 Second Driving Method in Phase Difference Signal AcquisitionPeriod>

Next, a second driving method of acquiring the phase difference signalin the pixel 2 according to the first configuration example will bedescribed with reference to FIGS. 8 and 9.

FIGS. 8 and 9 are diagrams illustrating a method of setting a biasvoltage to the upper electrode 54 of each pixel 2 in the case ofacquiring the phase difference signal.

The above-described first driving method is a driving method where, ineach of the phase difference pixels 2P_(A) and 2P_(B) constituting apair of pixels, only one side of the divided photoelectric conversionregions is used. Namely, in the phase difference pixel 2P_(A), only theleft-half photoelectric conversion region corresponding to the firstupper electrode 54 b is used, and in the phase difference pixel 2P_(B),only the right-half photoelectric conversion region corresponding to thesecond upper electrode 54 c is used.

On the contrary, in the second driving method, the reading of the phasedifference signal is performed two times, and in each of the phasedifference pixels 2P_(A) and 2P_(B), both of the divided photoelectricconversion regions are used.

For example, in the first read operation for the phase differencesignal, as illustrated in FIG. 8, in each of the phase difference pixels2P_(A) and 2P_(B), a high bias voltage is applied to the first upperelectrode 54 b, and a low bias voltage is applied to the second upperelectrode 54 c. By doing so, in the first read operation for the phasedifference signal, the left opening signal is acquired from each of thephase difference pixels 2P_(A) and 2P_(B).

In addition, in the second read operation for the phase differencesignal, as illustrated in FIG. 9, in each of the phase difference pixels2P_(A) and 2P_(B), a low bias voltage is applied to the first upperelectrode 54 b, and a high bias voltage is applied to the second upperelectrode 54 c. By doing so, in the second read operation for the phasedifference signal, the right opening signal is acquired from each of thephase difference pixels 2P_(A) and 2P_(B).

In addition, as a matter of course, as another order of acquisition, inthe first read operation for the phase difference signal, the rightopening signal may be acquired from each of the phase difference pixels2P_(A) and 2P_(B), and in the second read operation for the phasedifference signal, the left opening signal may be acquired from each ofthe phase difference pixels 2P_(A)and 2P_(B). Namely, the order ofacquisition of the right opening signal and the left opening signal isarbitrary.

By the driving described above, in each of the phase difference pixels2P_(A) and 2P_(B), one set of phase difference signals of thephotoelectric conversion regions having a position relationship of beingsymmetric with respect to the optical axis can be acquired. As a result,in the second driving method, since the number of pixels used for thephase difference direction can be increased in comparison with the firstdriving method, it is possible to perform auto-focusing at a higheraccuracy.

3. Second Configuration Example of Pixel

<3.1 Cross-Sectional Structure Diagram of Pixel>

Next, a second configuration example of the pixel 2 of the solid-stateimaging device 1 according to the first embodiment will be describedwith reference to FIG. 10.

FIG. 10 illustrates a cross-sectional structure of the pixel 2 in thesecond configuration example.

In addition, in FIG. 10, portions corresponding to those of theabove-described first configuration example are denoted by the samereference numerals, and the description thereof is appropriatelyomitted.

In comparison of the pixel structure of the second configuration examplewith the pixel structure of the first configuration example illustratedin FIG. 2, the second upper electrode 54 c of the phase difference pixel2P_(A) and the first upper electrode 54 b of the phase difference pixel2P_(B) in the first configuration example are replaced by a third upperelectrode 54 d. The third upper electrode 54 d is formed as one regionso as to extend over the phase difference pixel 2P_(A) and the phasedifference pixel 2P_(B).

Therefore, in the pixel structure of the first configuration exampleillustrated in FIG. 2, the phase difference pixel 2P_(A) and the phasedifference pixel 2P_(B) are not necessarily adjacent to each other.However, in the pixel structure of the second configuration example, thephase difference pixel 2P_(A) and the phase difference pixel 2P_(B) needto be adjacent to each other inside the pixel array portion 3.

The other structures excluding the third upper electrode 54 d in thesecond configuration example are similar to those of the pixel structurein the first configuration example.

<3.2 Driving Method in Phase Difference Signal Acquisition Period>

Next, a driving method of acquiring the phase difference signal in thepixel 2 according to the second configuration example will be describedwith reference to FIG. 11.

FIG. 11 is a diagram illustrating a method of setting a bias voltage tothe upper electrode 54 of each pixel 2 in the case of acquiring thephase difference signal.

In the case of acquiring the phase difference signal, as illustrated inFIG. 11, a high bias voltage is applied to the first upper electrode 54b of the phase difference pixel 2P_(A) and the second upper electrode 54c of the phase difference pixel 2P_(B). In addition, a low bias voltageis applied to the third upper electrode 54 d.

By doing so, in the phase difference pixel 2P_(A), the left openingsignal can be acquired, and in the phase difference pixel 2P_(B), theright opening signal can be acquired. Namely, since the signals of thesymmetric photoelectric conversion regions in the phase differencepixels 2P_(A) and 2P_(B) constituting a pair of pixels can be acquired,in the phase difference pixels 2P_(A) and 2P_(B) constituting a pair ofpixels, one set of phase difference signals of the photoelectricconversion regions having a position relationship of being symmetricwith respect to the optical axis can be acquired, so that it is possibleto achieve auto-focusing.

According to the driving method, although a similar phase differencesignal to that of the first driving method of the first configurationexample can be obtained, since the two upper electrodes 54 where the lowbias voltage is applied, that is, the second upper electrode 54 c of thephase difference pixel 2P_(A) and the first upper electrode 54 b of thephase difference pixel 2P_(B) in the first configuration example arereplaced by one third upper electrode 54 d in the second configurationexample, the number of control wire lines 61 supplying the bias voltagesmay be smaller than that of the first configuration example. Therefore,according to the second configuration example, the number of controlwire lines 61 can be reduced in comparison with the first configurationexample, so that wiring layout can be easily performed.

In addition, in the case of acquiring the image signal in the secondconfiguration example, a high bias voltage is applied to the upperelectrodes 54 of the entire pixels in the pixel array portion 3. Bydoing so, in the entire pixels of the phase difference pixel 2P and thenormal pixel 2X in the pixel array portion 3, the image signal can begenerated and output.

4. Third Configuration Example of Pixel

<4.1 Cross-Sectional Structure Diagram of Pixel>

Next, a third configuration example of the pixel 2 of the solid-stateimaging device 1 according to the first embodiment will be describedwith reference to FIG. 12.

FIG. 12 illustrates a cross-sectional structure of the pixel 2 in thethird configuration example.

In the description of FIG. 12 and thereafter, portions corresponding tothose of the above-described embodiments are denoted by the samereference numerals, and the description thereof is appropriatelyomitted.

In comparison of the pixel structure of the third configuration examplewith the pixel structure of the first configuration example illustratedin FIG. 2, in the third configuration example, in the normal pixel 2X,similarly to the phase difference pixel 2P, the upper electrode 54 isformed to be divided into two regions of a first upper electrode 54 band a second upper electrode 54 c.

The other structures excluding the upper electrode 54 in the thirdconfiguration example are similar to those of the pixel structure in thefirst configuration example.

In this manner, the upper electrodes 54 of the entire pixels in thepixel array portion 3 are formed to be divided, and thus, the continuityof pixel patterns is increased, so that it is possible to increase theuniformity in the processing steps for the formation of the upperelectrodes 54.

<4.2 Driving Method in Phase Difference Signal Acquisition Period>

Next, a driving method of acquiring the phase difference signal in thepixel 2 according to the third configuration example will be describedwith reference to FIG. 13.

FIG. 13 is a diagram illustrating a method of setting a bias voltage tothe upper electrode 54 of each pixel 2 in the case of acquiring thephase difference signal.

In the case of acquiring the phase difference signal, as illustrated inFIG. 13, in the phase difference pixel 2P_(A) of the phase differencepixels 2P_(A) and 2P_(B) constituting a pair of pixels, a high biasvoltage is applied to the first upper electrode 54 b, and a low biasvoltage is applied to the second upper electrode 54 c.

On the other hand, in the phase difference pixel 2P_(B) of the phasedifference pixels 2P_(A) and 2P_(B) constituting a pair of pixels, a lowbias voltage is applied to the first upper electrode 54 b, and a highbias voltage is applied to the second upper electrode 54 c.

A high bias voltage is applied to the first upper electrode 54 b and thesecond upper electrode 54 c in the normal pixel 2X. However, in the caseof acquiring the phase difference signal, since the signal of the normalpixel 2X is not used, a low bias voltage may be applied to the firstupper electrode 54 b and the second upper electrode 54 c in the normalpixel 2X.

By doing so, in the phase difference pixel 2P_(A), the left openingsignal can be acquired, and in the phase difference pixel 2P_(B), theright opening signal can be acquired. Therefore, in the phase differencepixels 2P_(A) and 2P_(B) constituting a pair of pixels, one set of phasedifference signals of the photoelectric conversion regions having aposition relationship of being symmetric with respect to the opticalaxis can be acquired, so that it is possible to achieve auto-focusing.

In addition, although the driving method described in FIG. 13 is thesame as the first driving method of acquiring the phase differencesignal described with reference to FIG. 6 in the pixel 2 according tothe first configuration example, even in the third configurationexample, the second driving method of acquiring the phase differencesignal described with reference to FIGS. 8 and 9 may also be used.

<4.3 Driving Method in Image Signal Acquisition Period>

Next, a driving method of acquiring the image signal in the pixel 2according to the third configuration example will be described withreference to FIG. 14.

FIG. 14 is a diagram illustrating a method of setting a bias voltage tothe upper electrode 54 of each pixel 2 in the case of acquiring theimage signal.

In the case of acquiring the image signal, as illustrated in FIG. 14, ahigh bias voltage is applied to the upper electrodes 54 of the entirepixels in the pixel array portion 3. By doing so, in the entire pixelsof the phase difference pixel 2P and the normal pixel 2X in the pixelarray portion 3, the image signal can be generated and output.

In the third configuration example, the phase difference pixel 2P andthe normal pixel 2X have the same pixel structure. Therefore, in thedescription of FIG. 13, for the convenience, the phase difference pixel2P and the normal pixel 2X are described separately, but the phasedifference signal can be acquired by using any pixel 2 inside the pixelarray portion 3 as the phase difference pixel 2P. In other words, amongthe entire pixels in the pixel array portion 3, like the phasedifference pixels 2P_(A) and 2P_(B) of FIG. 13, the pixels 2 whichcontrol the bias voltage become the phase difference pixels 2P.

Therefore, according to the third configuration example, it is possibleto acquire the phase difference signal from an arbitrary pixel 2. Inaddition, since the number of pixels used for phase difference detectioncan be increased, it is possible to perform auto-focusing at a higheraccuracy.

5. Fourth Configuration Example of Pixel

<5.1 Cross-Sectional Structure Diagram of Pixel>

Next, a fourth configuration example of the pixel 2 of the solid-stateimaging device 1 according to the first embodiment will be describedwith reference to FIG. 15.

FIG. 15 illustrates a cross-sectional structure of the pixel 2 in thefourth configuration example.

In comparison of the pixel structure of the fourth configuration examplewith the pixel structure of the first configuration example illustratedin FIG. 2, in the fourth configuration example, each of the lowerelectrodes 53 a of the phase difference pixels 2P_(A) and 2P_(B) in thefirst configuration example is divided into two regions corresponding tothe first upper electrode 54 b and the second upper electrode 54 c to bereplaced by a first lower electrode 53 b and a second lower electrode 53c. In addition, hereinafter, if there is no need to distinguish thelower electrode 53 a, the first lower electrode 53 b, and the secondlower electrode 53 c, each of the lower electrodes is simply referred toas a lower electrode 53.

In addition, the lower electrode 53 a is divided into two regions of thefirst lower electrode 53 b and the second lower electrode 53 c, andaccordingly, the metal wire line 55, the conductive plug 44, and thecharge retaining portion 45 are also formed so as to correspond to eachof the first lower electrode 53 b and the second lower electrode 53 c.Namely, the first lower electrode 53 b is provided with a metal wireline 55 b, a conductive plug 44 b, and a charge retaining portion 45 b,and the second lower electrode 53 c is provided with a metal wire line55 c, a conductive plug 44 c, and a charge retaining portion 45 c.

<5.2 Driving Method in Phase Difference Signal Acquisition Period>

Next, a driving method of acquiring the phase difference signal in thepixel 2 according to the fourth configuration example will be describedwith reference to FIG. 16.

FIG. 16 is a diagram illustrating a method of setting a bias voltage tothe upper electrode 54 of each pixel 2 in the case of acquiring thephase difference signal.

In the case of acquiring the phase difference signal, as illustrated inFIG. 16, in the phase difference pixel 2P_(A) of the phase differencepixels 2P_(A) and 2P_(B) constituting a pair of pixels, a high biasvoltage is applied to the first upper electrode 54 b, and a low biasvoltage is applied to the second upper electrode 54 c.

On the other hand, in the phase difference pixel 2P_(B) of the phasedifference pixels 2P_(A) and 2P_(B) constituting a pair of pixels, a lowbias voltage is applied to the first upper electrode 54 b, and a highbias voltage is applied to the second upper electrode 54 c.

A high bias voltage is also applied to the upper electrode 54 a of thenormal pixel 2X. However, in the case of acquiring the phase differencesignal, since the signal of the normal pixel 2X is not used, a low biasvoltage may be applied to the upper electrode 54 a of the normal pixel2X.

By doing so, in the phase difference pixel 2P_(A), the left openingsignal can be acquired, and in the phase difference pixel 2P_(B), theright opening signal can be acquired. Therefore, in the phase differencepixels 2P_(A) and 2P_(B) constituting a pair of pixels, one set of phasedifference signals of the photoelectric conversion regions having aposition relationship of being symmetric with respect to the opticalaxis can be acquired, so that it is possible to achieve auto-focusing.

In addition, although the driving method described in FIG. 16 is thesame as the first driving method of acquiring the phase differencesignal described with reference to FIG. 6 in the pixel 2 according tothe first configuration example, even in the fourth configurationexample, the second driving method of acquiring the phase differencesignal described with reference to FIGS. 8 and 9 may also be used.

According to the pixel structure of the fourth configuration example,the lower electrode 54 is divided into a first lower electrode 53 b anda second lower electrode 53 c corresponding to the first upper electrode54 b and the second upper electrode 54 c. By doing so, in the phasedifference signal acquisition period, when different bias voltages areapplied to the first upper electrode 54 b and the second upper electrode54 c in the phase difference pixel 2P, it is possible to completelysuppress the leak current flowing between the upper electrode 54 and thelower electrode 53 of the side where the low bias voltage is applied.

<5.3 Driving Method in Image Signal Acquisition Period>

Next, a driving method of acquiring the image signal in the pixel 2according to the fourth configuration example will be described withreference to FIG. 17.

FIG. 17 is a diagram illustrating a method of setting a bias voltage tothe upper electrode 54 of each pixel 2 in the case of acquiring theimage signal.

In the case of acquiring the image signal, as illustrated in FIG. 17, ahigh bias voltage is applied to the upper electrodes 54 of the entirepixels in the pixel array portion 3.

The image signal which is to be acquired from the phase difference pixel2P corresponds to the signal obtained by the two divided photoelectricconversion regions inside the pixel, namely, the signal obtained byadding (combining) the right opening signal and the left opening signal.The addition process may be performed in the phase difference pixel 2Por may be performed in the column signal processing circuit 5, theoutput circuit 7, or the like as a subsequent stage of the pixel arrayportion 3.

<Circuit Diagram of Phase Difference Pixel>

FIG. 18 illustrates a circuit diagram of the phase difference pixel 2Pin the case of performing the addition process in the phase differencepixel 2P. However, FIG. 18 is merely a circuit diagram of the portionwhich outputs the charges (signal charges) generated in thephotoelectric conversion film 52, and a circuit diagram of the portionwhich outputs the charges (signal charges) generated in the photodiodesPD1 and PD2 is omitted.

In the FIG. 18, the photoelectric conversion film 52 interposed by thefirst lower electrode 53 b and the first upper electrode 54 b is aphotoelectric conversion portion 62 b, and the photoelectric conversionfilm 52 interposed by the first lower electrode 53 c and the first upperelectrode 54 c is a photoelectric conversion portion 62 c.

The charges generated in the photoelectric conversion portion 62 b areretained in the charge retaining portion 45 b, and the charges generatedin the photoelectric conversion portion 62 c are retained in the chargeretaining portion 45 c.

The charge retaining portion 45 b is connected through a MOS transistor63 b as a switch element to the charge combining portion (charge storageunit) 64, and the charge retaining portion 45 c is also connectedthrough a MOS transistor 63 c to the charge combining portion 64. TheMOS transistor 63 b is turned on or off by the control signal TRXb, andthe MOS transistor 63 c is turned on or off by the control signal TRXc.

In a case where the phase difference pixel 2P outputs the phasedifference signal, the MOS transistor 63 b and the MOS transistor 63 care turned on at different timing, and thus, the charges generated inthe photoelectric conversion portion 62 b and the charges generated inthe photoelectric conversion portion 62 c are separately output. Namely,the left opening signal and the right opening signal are sequentiallyoutput.

On the other hand, in a case where the phase difference pixel 2P outputsthe image signal, the MOS transistor 63 b and the MOS transistor 63 care simultaneously turned on, and thus, the charges generated in thephotoelectric conversion portion 62 b and the charges generated in thephotoelectric conversion portion 62 c are combined by the chargecombining portion 64, so that the combined charges are output.

When the reset transistor 65 is turned on by a reset signal RST, thecharge retained in the charge combining portion 64 are discharged to theconstant voltage source VDD, the reset transistor resets the potentialof the charge combining portion 64.

The amplification transistor 66 outputs a pixel signal according to thepotential of the charge combining portion 64. Namely, the amplificationtransistor 66 constitutes a load MOS (not illustrated) as a constantcurrent source and a source follower circuit, and a signal indicating alevel according to the charges retained in the charge combining portion64 is output from the amplification transistor 66 through the selectiontransistor 67 to the column signal processing circuit 5 (FIG. 1). Theload MOS is provided, for example, inside the column signal processingcircuit 5.

When the phase difference pixel 2P is selected by the select signal SEL,the selection transistor 67 is turned on to output the signal of thephase difference pixel 2P through the vertical signal line 9 to thecolumn signal processing circuit 5. The control signals TRXb and TRXc,the reset signal RST, and the select signal SEL are controlled by, forexample, the vertical driver circuit 4.

The above description is the description of the case of acquiring thephase difference signal and the image signal in a time division manner.However, the driving of the image signal acquisition period is performedone time, and by the subsequent-stage output circuit 7 or an imagesignal processor (ISP) or the like as a subsequent stage of thesolid-state imaging device 1, the left opening signal and the rightopening signal may be directly used as the phase difference signal, andthe addition signal of the left opening signal and the right openingsignal may be used as the image signal.

6. Fifth Configuration Example of Pixel

<6.1 Cross-Sectional Structure Diagram of Pixel>

Next, a fifth configuration example of the pixel 2 of the solid-stateimaging device 1 according to the first embodiment will be describedwith reference to FIG. 19.

FIG. 19 illustrates a cross-sectional structure of the pixel 2 in thefifth configuration example.

In the fifth configuration example, in any one of the phase differencepixel 2P and the normal pixel 2X, the upper electrode 54 is formed to bedivided into two regions of a first upper electrode 54 b and a secondupper electrode 54 c. In addition, the lower electrode 53 is also formedto be divided into two regions of a first lower electrode 53 b and asecond lower electrode 53 c facing the first upper electrode 54 b andthe second upper electrode 54 c.

In addition, the metal wire line 55, the conductive plug 44, and thecharge retaining portion 45 of the normal pixel 2X are also formed tocorrespond to each of the first lower electrode 53 b and the secondlower electrode 53 c. Namely, the first lower electrode 53 b is providedwith a metal wire line 55 b, a conductive plug 44 b, and a chargeretaining portion 45 b, and the second lower electrode 53 c is providedwith a metal wire line 55 c, a conductive plug 44 c, and a chargeretaining portion 45 c.

Namely, in the fifth configuration example, in the entire pixels, thereare two divided photoelectric conversion regions by the photoelectricconversion films 52.

In this manner, the lower electrodes 53 and the upper electrodes 54 ofthe entire pixels in the pixel array portion 3 are formed to be divided,and thus, the continuity of pixel patterns is increased, so that it ispossible to increase the uniformity in the processing steps after theformation of the lower electrodes 53.

<6.2 First Driving Method in Phase Difference Signal Acquisition Period>

Next, a first driving method of acquiring the phase difference signal inthe pixel 2 according to the fifth configuration example will bedescribed with reference to FIG. 20.

FIG. 20 is a diagram illustrating a method of setting a bias voltage tothe upper electrode 54 of each pixel 2 in the case of acquiring thephase difference signal.

In the case of acquiring the phase difference signal, as illustrated inFIG. 20, in the phase difference pixel 2P_(A) of the phase differencepixels 2P_(A) and 2P_(B) constituting a pair of pixels, a high biasvoltage is applied to the first upper electrode 54 b, and a low biasvoltage is applied to the second upper electrode 54 c.

On the other hand, in the phase difference pixel 2P_(B) of the phasedifference pixels 2P_(A) and 2P_(B) constituting a pair of pixels, a lowbias voltage is applied to the first upper electrode 54 b, and a highbias voltage is applied to the second upper electrode 54 c.

A high bias voltage is also applied to the first upper electrode 54 band the second upper electrode 54 c in the normal pixel 2X. However, inthe case of acquiring the phase difference signal, since the signal ofthe normal pixel 2X is not used, a low bias voltage may be applied tothe first upper electrode 54 b and the second upper electrode 54 c inthe normal pixel 2X.

By doing so, in the phase difference pixel 2P_(A), the left openingsignal can be acquired, and in the phase difference pixel 2P_(B), theright opening signal can be acquired. Therefore, in the phase differencepixels 2P_(A) and 2P_(B) constituting a pair of pixels, one set of phasedifference signals of the photoelectric conversion regions having aposition relationship of being symmetric with respect to the opticalaxis can be acquired, so that it is possible to achieve auto-focusing.

In addition, in the fifth configuration example, the phase differencepixel 2P and the normal pixel 2X have the same pixel structure.Therefore, in the description of FIG. 20, for the convenience, the phasedifference pixel 2P and the normal pixel 2X are described separately,but the phase difference signal can be acquired by using any pixel 2inside the pixel array portion 3 as the phase difference pixel 2P. Inother words, among the entire pixels in the pixel array portion 3, likethe phase difference pixels 2P_(A) and 2P_(B) of FIG. 20, the pixels 2which controls the bias voltage become the phase difference pixels 2P.

<6.3 Driving Method in Image Signal Acquisition Period>

Next, a driving method of acquiring the image signal in the pixel 2according to the fifth configuration example will be described withreference to FIG. 21.

FIG. 21 is a diagram illustrating a method of setting a bias voltage tothe upper electrode 54 of each pixel 2 in the case of acquiring theimage signal.

In the case of acquiring the image signal, as illustrated in FIG. 21, ahigh bias voltage is applied to the upper electrodes 54 of the entirepixels in the pixel array portion 3. In each of the phase differencepixel 2P and the normal pixel 2X, the image signal is generated by thecharge combining portion 64, the output circuit 7, or the like adding(combining) the signals, that is, the right opening signal and the leftopening signal obtained in the two divided photoelectric conversionregions in the pixel. As a result, in the entire pixels of the phasedifference pixel 2P and the normal pixel 2X in the pixel array portion3, the image signal can be generated and output.

Therefore, according to the fifth configuration example, it is possibleto acquire the phase difference signal from an arbitrary pixel 2. Inaddition, since the number of pixels used for phase difference detectioncan be increased, it is possible to perform auto-focusing at a higheraccuracy.

In addition, according to the pixel structure of the fifth configurationexample, the lower electrode 54 of each pixel 2 is divided into a firstlower electrode 53 b and a second lower electrode 53 c corresponding tothe first upper electrode 54 b and the second upper electrode 54 c. Bydoing so, in the phase difference signal acquisition period, whendifferent bias voltages are applied to the first upper electrode 54 band the second upper electrode 54 c in the phase difference pixel 2, itis possible to completely suppress the leak current flowing between theupper electrode 54 and the lower electrode 53 of the side where the lowbias voltage is applied.

<6.4 Second Driving Method in Phase Difference Signal AcquisitionPeriod>

Next, a second driving method of acquiring the phase difference signalin the pixel 2 according to the fifth configuration example will bedescribed with reference to FIGS. 22 and 23.

FIGS. 22 and 23 are diagrams illustrating a method of setting a biasvoltage to the upper electrode 54 of each pixel 2 in the case ofacquiring the phase difference signal.

The second driving method is similar to the second driving method in thefirst configuration example described with reference to FIGS. 8 and 9.

Namely, for example, in the first read operation for the phasedifference signal, as illustrated in FIG. 22, in each of the phasedifference pixels 2P_(A) and 2P_(B), a high bias voltage is applied tothe first upper electrode 54 b, and a low bias voltage is applied to thesecond upper electrode 54 c. By doing so, in the first read operationfor the phase difference signal, the left opening signal is acquiredfrom each of the phase difference pixels 2P_(A) and 2P_(B).

In addition, in the second read operation for the phase differencesignal, as illustrated in FIG. 23, in each of the phase differencepixels 2P_(A) and 2P_(B), a low bias voltage is applied to the firstupper electrode 54 b, and a high bias voltage is applied to the secondupper electrode 54 c. By doing so, in the second read operation for thephase difference signal, the right opening signal is acquired from eachof the phase difference pixels 2P_(A) and 2P_(B).

In addition, as another order of acquisition, in the first readoperation for the phase difference signal, the right opening signal maybe acquired from each of the phase difference pixels 2P_(A) and 2P_(B),and in the second read operation for the phase difference signal, theleft opening signal may be acquired from each of the phase differencepixels 2P_(A) and 2P_(B). Namely, the order of acquisition of the rightopening signal and the left opening signal is arbitrary.

In addition, in the example of FIGS. 22 and 23, a high bias voltage isalso applied to the first upper electrode 54 b and the second upperelectrode 54 c in the normal pixel 2X, and the signal can also beacquired from the normal pixel 2X. However, the signal of the normalpixel 2X is not used. Therefore, in the case of acquiring the phasedifference signal, a low bias voltage may be applied to the first upperelectrode 54 b and the second upper electrode 54 c in the normal pixel2X.

By the driving described above, in each of the phase difference pixels2P_(A) and 2P_(B), one set of phase difference signals of thephotoelectric conversion regions having a position relationship of beingsymmetric with respect to the optical axis can be acquired. As a result,in the second driving method, since the number of pixels used for thephase difference detection can be increased in comparison with the firstdriving method, it is possible to perform auto-focusing at a higheraccuracy.

In addition, in the above description, similarly to the otherembodiments, the phase difference signal and the image signal areacquired in a time division manner. However, the driving of the imagesignal acquisition period is performed one time, and by thesubsequent-stage output circuit 7 or an image signal processor (ISP) orthe like as a subsequent stage of the solid-state imaging device 1, theleft opening signal and the right opening signal may be directly used asthe phase difference signal, and the addition signal of the left openingsignal and the right opening signal may be used as the image signal.

In the second to fifth configuration examples, as described withreference to FIGS. 3 to 5, the arrangement and shape of the first upperelectrode 54 b and the second upper electrode 54 c are arbitrary. Inaddition, in the above-described example, described is the example wherethe regions of first upper electrode 54 b and the second upper electrode54 c are pupil-divided equally. However, if the first upper electrode 54b and the second upper electrode 54 c acquiring one set of phasedifference signals are asymmetric with respect to the optical axis ofthe incident light and are arranged to be symmetric with each other, theregions may be pupil-divided with an arbitrary division ratio.

7. Sixth Configuration Example of Pixel

<7.1 Cross-Sectional Structure Diagram of Pixel>

In the above-described first to fifth configuration examples, each pixel2 includes the first photoelectric conversion portion photoelectricallyconverting G (green) light outside the semiconductor substrate 12 andincludes the second photoelectric conversion portion photoelectricallyconverting B (blue) light and the third photoelectric conversion portionphotoelectrically converting R (red) light inside the substrate, and thesolid-state imaging device 1 is configured to detect the phasedifference by using the signal of G.

The phase difference detection method according to the presentdisclosure using the photoelectric conversion portion configured withthe photoelectric conversion film 52 interposed between the lowerelectrode 53 and the upper electrode 54 may also be applied to the pixelstructure other than the above-described vertical spectroscopic pixelstructure.

Therefore, as an example of the pixel structure other than the verticalspectroscopic pixel structure, the sixth configuration example of thepixel 2 will be described with reference to FIG. 24.

FIG. 24 illustrates a cross-sectional structure of the pixel 2 in thesixth configuration example.

In comparison of the pixel structure of the sixth configuration examplewith the pixel structure of the first configuration example illustratedin FIG. 2, in the sixth configuration example, the photodiodes PD1 andPD2 are not formed in the semiconductor substrate 12. In addition, incontrast with the first configuration example where the photoelectricconversion film 52 is formed with a material of photoelectricallyconverting the green wavelength light, in the sixth configurationexample, a photoelectric conversion film 52A, so-called a panchromaticfilm photoelectrically converting light in the entire wavelength rangeof visible light is formed, and a color filter 81 is formed between theon-chip lens 57 and the photoelectric conversion film 52A.

The color filters 81 are formed so that, for example, the colors of R(red), G (green), and B (blue) are in a Bayer arrangement. By doing so,the photoelectric conversion film 52A photoelectrically converts lighthaving a predetermined wavelength (color) which passes through the colorfilter 81. For example, the color filter 81 of the phase differencepixel 2P is associated with G (green) color, and the left opening signaland the right opening signal detecting the phase difference are set tothe signal for the same color.

In addition, the color filters 81 may be configured so that, acombination of the colors of R (red), G (green), B (blue), and W (white)may be regularly arranged. The color filter 81 for W (white) is a filmwhich transmits light in the entire wavelength range of visible light.

Even in the pixel structure, the acquisition of the phase differencesignal according to the first driving method described with reference toFIG. 6, the acquisition of the image signal according to the drivingmethod described with reference to FIG. 7, and the acquisition of thephase difference signal according to the second driving method describedwith reference to FIGS. 8 and 9 can be performed.

Therefore, the phase difference can be detected at a high sensitivity byusing the photoelectric conversion film 52A (photoelectric conversionportion) provided outside the semiconductor substrate 12, it is possibleto improve auto-focusing accuracy.

In addition, it is possible to obtain the phase difference signal byonly controlling the bias voltage applied to the upper electrode 54, andin the case of acquiring an image signal, an image signal similar to anormal pixel 2X can be generated from the phase difference pixel 2P. Inother words, the phase difference pixel 2P does not become a defectivepixel, and an image signal can also be acquired from the phasedifference pixel 2P.

In addition, in FIG. 24, although the above-described firstconfiguration example is applied to the configurations of the lowerelectrode 53 and the upper electrode 54, needless to say, the otherconfigurations of the second to fifth configuration examples may besimilarly applied.

8. Example of Application to Electronic Device

The above-described solid-state imaging device 1 can be applied tovarious types of electronic devices, for example, imaging devices suchas a digital still camera or a digital video camera, mobile phoneshaving an imaging function, or an audio player having an imagingfunction.

FIG. 25 is a block diagram illustrating a configuration example of animaging device as an electronic device according to the presentdisclosure.

An imaging device 90 illustrated in FIG. 25 is configured to include anoptical unit 91, a solid-state imaging device 94, a control circuit 95,a signal processing circuit 96, a monitor 97, and a memory 98 to becapable of capturing a still image and a moving picture.

The optical unit 91 is configured to include one or a plurality of imageforming lenses 92, an aperture 93, and the like to guide light (incidentlight) from a subject to the solid-state imaging device 94 and to focusthe light on a light reception plane of the solid-state imaging device94.

The solid-state imaging device 94 is configured with the above-describedsolid-state imaging device 1. The solid-state imaging device 94 storessignal charges in a certain time interval according to the light focusedon the light reception plane through the image forming lens 92 or theaperture 93. The signal charges stored in the solid-state imaging device94 are transferred according to a driving timing (timing signal)supplied from the control circuit 95. The solid-state imaging device 94may be configured as one chip by itself or may be configured as aportion of a camera module where the solid-state imaging device togetherwith the optical unit 91, the signal processing circuit 96, or the likeis packaged.

The control circuit 95 outputs a driving signal of controlling atransfer operation and a shutter operation of the solid-state imagingdevice 94 to drive the solid-state imaging device 94. In addition, thecontrol circuit 95 adjusts the image forming lens 92 or the aperture 93of the optical unit 91 on the basis of the pixel signal (phasedifference signal or image signal) obtained from the solid-state imagingdevice 94.

The signal processing circuit 96 applies various types of signalprocesses on the pixel signal output from the solid-state imaging device94. The image (image data) obtained by signal processing circuit 96applying the signal processes is supplied to the monitor 97 to bedisplayed or is supplied to the memory 98 to be stored (recorded).

As described above, by using the solid-state imaging device 1 accordingto each embodiment as the solid-state imaging device 94, since the phasedifference can be detected at a high sensitivity, it is possible toimprove auto-focusing accuracy. Therefore, with respect to the imagingdevice 90 such as a video camera, a digital still camera, and a cameramodule for a mobile device such as a mobile phone, it is possible toobtain a captured image with a high image quality.

9. Second Embodiment of Solid-State Imaging Device

In recent years, interchangeable-lens digital cameras have rapidlyspread. The interchangeable-lens digital camera is a camera of which theoptical unit 91 can be changed by a user in the imaging device 90illustrated in FIG. 25. In this case, the control circuit 95 can detectlens ID identifying the mounted optical unit 91 (image forming lens 92thereof) from the optical unit 91.

The solid-state imaging device 1 used for the interchangeable-lenscamera needs to cope with various types of lenses ranging from the imageforming lens 92 having a short exit pupil distance to the image forminglens 92 having along exit pupil distance.

However, in order to obtain phase difference auto-focusing performancewith a high degree of light separation up to a high image height, thenumber of times of pupil division corresponding to the number of lenstypes is needed, and thus, the number of arranged phase differencepixels becomes large. In a case where the phase difference pixel cannotoutput an image signal like the normal pixel, the pixel becomes adefective pixel, the image signal needs to be obtained by interpolationor the like from the adjacent pixels. Therefore, it is desirable thatthe number of phase difference pixels arranged in the pixel arrayportion is small.

Therefore, hereinafter, as a second embodiment of the solid-stateimaging device 1, a pixel structure capable of reducing the number ofphase difference pixels arranged in the pixel array portion 3 will bedescribed.

FIG. 26 is a block diagram illustrating a second embodiment of asolid-state imaging device according to the present disclosure.

In the FIG. 26, portions corresponding to those of the first embodimentillustrated in FIG. 1 are denoted by the same reference numerals, andthe description thereof is appropriately omitted.

In the second embodiment of the solid-state imaging device 1, in thepixel array portion 3, pixels 100 are two-dimensionally arranged in amatrix shape. The pixels 100 include normal pixels 100X generating asignal for image generation and phase difference pixels 100P generatinga signal for focus detection. The phase difference pixels 100P includephase difference pixels 100P_(A) and 100P_(B) of which charge generationregions have a position relationship of being symmetric with respect tothe optical axis.

In the above-described first embodiment of the solid-state imagingdevice 1, similarly to the normal pixel 2X, the phase difference pixel2P can also output the signal for image generation (image signal) bycontrolling the bias voltage applied to the upper electrode 54.

However, in the second embodiment, the phase difference pixel 100Pcannot output the signal for image generation (image signal) like thenormal pixel 100X, but the number of phase difference pixels 100Parranged in the pixel array portion 3 can be reduced from the relatedart.

In the second embodiment, for example, as illustrated in FIG. 26, withrespect to the normal pixels 100X arranged in a matrix shape in thepixel array portion 3, a portion of or the entire normal pixels 100X ina predetermined pixel row are configured to be replaced by the phasedifference pixels 100P. The configurations other than that of thesolid-state imaging device 1 in the second embodiment are similar tothose of the above-described first embodiment, and thus, the descriptionthereof is omitted.

10. First Configuration Example of Pixel

<10.1 Cross-Sectional Structure Diagram of Pixel>

A first configuration example of the pixel 100 of the solid-stateimaging device 1 according to the second embodiment will be describedwith reference to FIG. 27.

FIG. 27 illustrates a cross-sectional structure of a normal pixel 100Xand a phase difference pixel 100P_(A).

In the description of FIG. 27, first, the pixel structure of the normalpixel 100X will be described, and after that, with respect to the phasedifference pixel 100P_(A), only the portions different from those of thenormal pixel 100X will be described.

The pixel structure of the normal pixel 100X is described.

By stacking second conductive type (for example, N type) semiconductorregions 112 and 113 in the depth direction in a first conductive type(for example, p type) semiconductor region 111 of the semiconductorsubstrate 12, photodiodes PD1 and PD2 are formed in the depth directionby PN junction. The photodiode PD1 having the semiconductor region 112as a charge storage region is a photoelectric conversion portion whichreceives and photoelectrically converts blue light and, and thephotodiode PD2 having the semiconductor region 113 as a charge storageregion is a photoelectric conversion portion which receives andphotoelectrically converts red light.

A portion of the semiconductor region 112 of the photodiode PD1 includesan extension portion 112 a formed by extending to reach the frontsurface side of the semiconductor substrate 12. The semiconductor region112 of the photodiode PD1 also serves as one of source/drain regions ofthe pixel transistor Tr1 for reading the charges stored therein. Thepixel transistor Tr1 is configured to include a semiconductor region 112which is one of the source/drain regions, a second conductive typesemiconductor region 114 which is the other of the source/drain regions,and a gate electrode 115. With respect to the semiconductor region 113of the photodiode PD2, a pixel transistor for reading charges stored inthe semiconductor region 113 is also formed, but omitted inillustration.

In addition, in the semiconductor substrate 12, conductive plugs 121 forextracting charges photoelectrically converted by the later-describedphotoelectric conversion film 135 to the substrate front surface side(lower side in the figure) are formed to penetrate the semiconductorsubstrate 12 (semiconductor region 41 thereof). In addition, althoughnot illustrated, outer circumferences of the conductive plug 121 areinsulated by an insulating film of SiO2, SiN, or the like.

The conductive plug 121 is connected to a charge retaining portion 122which is formed as the second conductive type (for example, N type)semiconductor region inside the semiconductor region 111. The chargeretaining portion 122 temporarily retains the charges photoelectricallyconverted by the photoelectric conversion film 135 until the charges areread. The charges retained in the charge retaining portion 122 are readby the pixel transistor Tr3. The pixel transistor Tr3 is configured toinclude a gate electrode 124, a second conductive type semiconductorregion 123 as a source/drain region, and a charge retaining portion 122.

On the interface of the back surface side (upper side in the figure) ofthe semiconductor substrate 12, an anti-reflective film 131 is formed,and in the pixel boundary portion on the anti-reflective film 131, lightshielding films 132A and 132B are formed with a conductive material suchas tungsten (W), aluminum (Al), or copper (Cu). The light shielding film132A is connected through a contact portion 132P formed with the samematerial to the lower electrode 134 and is also connected to theconductive plug 121. By doing so, the light shielding film 132A has afunction of transferring the charges generated in the photoelectricconversion film 135 to the conductive plug 121. In addition, the lightshielding film 132A and the light shielding film 132B are electricallyseparated from each other.

The upper sides of the light shielding films 132A and 132B and the upperside of the anti-reflective film 131 are planarized by an insulatingfilm 133, and on the insulating film 133, a lower electrode 134, aphotoelectric conversion film 135, and an upper electrode 136 are formedin this order.

The photoelectric conversion film 135, the lower electrode 134 under thephotoelectric conversion film, and the upper electrode 136 on thephotoelectric conversion film constitute a photoelectric conversionportion photoelectrically converting green wavelength light.

On the upper electrode 136, a passivation film 137 is formed, and on thepassivation film 137, a high refractive index layer 138 and an on-chiplens 139 are formed. The high refractive index layer 138 and the on-chiplens 139 may be formed with the same material.

The semiconductor regions 111 to 113 of the normal pixel 100X correspondto the semiconductor regions 41 to 43 of the normal pixel 2X accordingto the first embodiment, respectively, and the lower electrode 134, thephotoelectric conversion film 135, and the upper electrode 136 of thenormal pixel 100X correspond to the lower electrode 53 a, thephotoelectric conversion film 52, and the upper electrode 54 a of thenormal pixel 2X according to the first embodiment, respectively. As amaterial of each film, a similar material to that of the above-describedfirst embodiment may be used.

Therefore, similarly to the normal pixel 2X of the first embodiment, thepixel structure of the normal pixel 100X is also a verticalspectroscopic pixel structure where the green light is photoelectricallyconverted by the photoelectric conversion film 135 formed outside thesemiconductor substrate (silicon layer) 12, and the blue light and thered light are photoelectrically converted by the photodiodes PD1 and PD2in the semiconductor substrate 12.

However, in the normal pixels 2X according to the first embodiment, theupper electrodes 54 a are formed to be separated in unit of a pixel, andon the contrary, in the normal pixels 100X according to the secondembodiment, the upper electrodes 136 are formed to be continuous overthe entire surface of the pixel array portion 3.

Next, the pixel structure of the phase difference pixel 100P_(A) will bedescribed. In addition, in the description of the pixel structure of thephase difference pixel 100P_(A), only the portions different from thoseof the normal pixel 100X will be described.

In the phase difference pixel 100P_(A), the light shielding film 132Bformed in the pixel boundary portion in the normal pixel 100X isreplaced by a light shielding film 132C. The light shielding film 132Cis formed to cover the one-side half (left half in FIG. 27) of the lightreception region of the photodiodes PD1 and PD2. The light receptionregion of the photodiodes PD1 and PD2 in the planar direction becomesthe right-half region of the semiconductor regions 112 and 113.

In addition, in the phase difference pixel 100P_(A), the lower electrode134A is formed only in the region corresponding to the right half of thelower electrode 134 of the normal pixel 100X. In other words, the lowerelectrode 134A is formed only in the upper side of the opening region ofthe light shielding films 132A and 132C. In the region where the lowerelectrode 134A corresponding to the left half of the lower electrode 134of the normal pixel 100X is not formed, an insulating film 133 isburied.

The other structures of the phase difference pixel 100P_(A) are similarto those of the normal pixel 100X.

The phase difference pixel 100P_(A) having the above-describedconfiguration is configured so that the photoelectric conversion regionof the three-layered photoelectric conversion portion photoelectricallyconverting the incident light of R, G, and B is a planar region beingasymmetric with respect to the optical axis of the incident light. Morespecifically, the region of the photoelectric conversion film 135interposed by the upper electrode 136 and the lower electrode 134A is aright-half region of the pixel. In addition, the light reception regionsof the photodiodes PD1 and PD2 as the opening portions of the lightshielding films 132A and 132C are right-half regions of the pixel.

In addition, although not illustrated, the phase difference pixel100P_(B) which together with the phase difference pixel 100P_(A)constitutes a pair of pixels is configured to be a left-half region ofthe pixel where the photoelectric conversion region of the three-layeredphotoelectric conversion portion photoelectrically converting incidentlight of R, G, and B and the phase difference pixel 100P_(A) have aposition relationship of being symmetric with respect to the opticalaxis.

Therefore, in the phase difference pixel 100P_(A), the right openingsignal can be acquired, and in the phase difference pixel 100P_(B), theleft opening signal can be acquired. Accordingly, in the phasedifference pixels 100P_(A) and 100P_(B) constituting a pair of pixels,one set of phase difference signals of the photoelectric conversionregions having a position relationship of being symmetric with respectto the optical axis can be acquired. By using the phase differencesignal, it is possible to achieve auto-focusing.

In addition, in the above-described example, described is the examplewhere, in the phase difference pixels 100P_(A) and 100P_(B) constitutinga pair of pixels, the charge generation regions of the three-layeredphotoelectric conversion portion where the charges are generated areformed to be symmetric in the horizontal direction (left-right directionof the paper). However, similarly to the first embodiment, the structurewhere the charge generation regions are formed to be symmetric in thevertical direction (up-down direction of the paper) or the diagonaldirection (oblique direction of the paper) may be used as a matter ofcourse.

<10.2 Light Reception Angle Distribution Characteristics>

Light reception angle distribution characteristics of the normal pixel100X and the phase difference pixel 100P_(A) will be described withreference to FIG. 28.

In A of FIG. 28 and B of FIG. 28, a light-condensed state of theincident light in the normal pixel 100X and the phase difference pixel100P_(A) is indicated by bold solid lines.

C of FIG. 28 illustrates light reception angle distributions of incidentlight of R, G, and B in the normal pixel 100X, and D of FIG. 28illustrates light reception angle distributions of incident light of R,G, and B in the phase difference pixel 100P_(A). The horizontal axis ofthe light reception angle distribution denotes an incident angle oflight, and the vertical axis denotes sensitivity (output value) of thepixel according to the incident light.

In the normal pixel 100X, as illustrated in C of FIG. 28, thephotoelectric conversion portions of R, G, and B have a sufficientsensitivity of light reception over a wide range of the incident angle.

On the contrary, since only the right-half region of the pixel becomes acharge generation region, as illustrated in D of FIG. 28, the phasedifference pixel 100P_(A) has light reception sensitivitycharacteristics where the sensitivity in the right side from theincident angle of 0° is high, the sensitivity in the left side from theincident angle of 0° is low, and the sensitivity is linearly changed inthe vicinity of the incident angle of 0°.

In addition, with respect to the slope of the sensitivity change in thevicinity of the incident angle of 0° as a region where the sensitivityis linearly changed, the slope of the B signal is steepest, and the slopof the G signal is gentlest. This is because, as illustrated in B ofFIG. 28, the positions of the three-layered photoelectric conversionportion of R, G, and B in the height direction (depth direction) aredifferent from each other, and the light-condensed spot diameter ϕG ofthe incident light in the G photoelectric conversion portion and thelight-condensed spot diameter ϕB of the incident light in the Bphotoelectric conversion portion are different from each other.

The slope of the sensitivity change of the B signal having a smalllight-condensed spot diameter of the incident light becomes steep, andthus, the light separation performance (degree of light separation) ishigh. The slope of the sensitivity change of the G signal having a largelight-condensed spot diameter of the incident light becomes gentle, andthus, the light separation performance (degree of light separation) islower than that of the B light.

However, in the range of the incident angle where the sensitivity islinearly changed, the light separation performance is good, and thus,the signal can be used as a signal for focus detection.

The range of the incident angle where the sensitivity is linearlychanged is, for example, about ±5° (degrees) for the B signal havinghigh light separation performance, and about ±20° (degrees) for the Gsignal having low light separation performance. Therefore, the G signalcan cope with a wider range of the incident angle than the B signal can.

In the second embodiment of the solid-state imaging device 1, in onephase difference pixel 100P, by acquiring plural types (two or moretypes) of the phase difference signals by using a plurality of thephotoelectric conversion portions of which the light-condensed spotdiameters are different, it is possible to cope with a wide range oftypes of lenses ranging from the image forming lens 92 having a shortexit pupil distance to the image forming lens 92 having a long exitpupil distance. In addition, since one phase difference pixel 100P cancope with a wide range of types of lenses, it is possible to reduce thenumber of phase difference pixels 100P arranged in the pixel arrayportion 3, and it is possible to reduce the number of pixels which aretreated as defective pixels.

In addition, one phase difference pixel 100P can cope with a wide rangeof types of lenses, and thus, the number of types of pupil division canbe reduced, so that it is possible to alleviate problems of an increasein load due to complicated signal processes, a loss of a degree offreedom in adding or culling of a moving picture, and a deterioration inimage quality due to correction marks.

In addition, in the second embodiment of the solid-state imaging device1, in one phase difference pixel 100P, two phase difference signals ofthe G signal and the B signal are configured to be detected. However,only the G signal as the phase difference signal may be configured to bedetected. Even in this case, the G photoelectric conversion portion isformed in the layer closer to the on-chip lens 139 than to thesemiconductor substrate 12, and thus, the light-condensed spot diameterϕG of incident light in the G photoelectric conversion portion isincreased, so that it is possible to cope with a wide range of types oflenses.

11. Second Configuration Example of Pixel

A second configuration example of the pixel 100 of the solid-stateimaging device 1 according to the second embodiment will be describedwith reference to FIG. 29.

FIG. 29 illustrates a cross-sectional structure of a phase differencepixel 100P_(A) in the second configuration example.

In addition, in the second to fifth configuration examples describedhereinafter, only the portions different from those of the firstconfiguration example illustrated in FIG. 27 will be described. Inaddition, in the second to fifth configuration examples, theconfiguration of the normal pixel 100X is the same as that of the firstconfiguration example illustrated in FIG. 27, an thus, the descriptionthereof is omitted.

In the second configuration example, a photoelectric conversion film135A and an upper electrode 136A constituting a portion of thephotoelectric conversion portion photoelectrically converting greenlight are changed from the photoelectric conversion film 135 and theupper electrode 136 in the first configuration example. Namely, in thesecond configuration example, the photoelectric conversion film 135A andthe upper electrode 136A are also formed only in the regioncorresponding to the right half as a region facing the lower electrode134A. In the portion where the photoelectric conversion film 135A andthe upper electrode 136A on the light shielding films 132C and 132A areremoved, an insulating film 133 is buried.

In the second configuration example of the phase difference pixel100P_(A) described above, in one phase difference pixel 100P, byacquiring plural types (two or more types) of the phase differencesignals by using a plurality of the photoelectric conversion portions ofwhich the light-condensed spot diameters are different, it is possibleto cope with a wide range of types of lenses ranging from the imageforming lens 92 having a short exit pupil distance to the image forminglens 92 having a long exit pupil distance. In addition, since one phasedifference pixel 100P can cope with a wide range of types of lenses, itis possible to reduce the number of phase difference pixels 100Parranged in the pixel array portion 3, and it is possible to reduce thenumber of pixels which are treated as defective pixels.

12. Third Configuration Example of Pixel

A third configuration example of the pixel 100 of the solid-stateimaging device 1 according to the second embodiment will be describedwith reference to FIG. 30.

FIG. 30 illustrates a cross-sectional structure of a phase differencepixel 100P_(A) in the third configuration example.

In the third configuration example, similarly to the secondconfiguration example illustrated in FIG. 29, the photoelectricconversion film 135A and the upper electrode 136A are formed only in theregion corresponding to the right half corresponding to the lowerelectrode 134A. In the portion where the photoelectric conversion film135A and the upper electrode 136A on the light shielding films 132C and132A are removed, an insulating film 133 is buried.

Therefore, in the third configuration example, in one phase differencepixel 100P, by acquiring plural types (two or more types) of the phasedifference signals by using a plurality of the photoelectric conversionportions of which the light-condensed spot diameter are different, it ispossible to cope with a wide range of types of lenses ranging from theimage forming lens 92 having a short exit pupil distance to the imageforming lens 92 having a long exit pupil distance. In addition, sinceone phase difference pixel 100P can cope with a wide range of types oflenses, it is possible to reduce the number of phase difference pixels100P arranged in the pixel array portion 3, and it is possible to reducethe number of pixels which are treated as defective pixels.

In addition, in the third configuration example, the light shieldingfilm 132C shielding the left halves of the photodiodes PD1 and PD2 isconnected to GND and is also connected through a contact portion 132Qformed with the same material as the light shielding film 132C to thelower electrode 134 on the contact portion.

By doing so, the unnecessary charges which are generated in the portionsother than the G photoelectric conversion portion configured with thelower electrode 134A, the photoelectric conversion film 135A, and theupper electrode 136A and are not used as the phase difference signal maybe discharged to GND.

13. Fourth Configuration Example of Pixel

A fourth configuration example of the pixel 100 of the solid-stateimaging device 1 according to the second embodiment will be describedwith reference to FIG. 31.

FIG. 31 illustrates a cross-sectional structure of a phase differencepixel 100P_(A) in the fourth configuration example.

In the fourth configuration example, the high refractive index layer 138under the on-chip lens 139 is omitted or formed to be thin (omitted inFIG. 31), and the insulating film 133 on the light shielding films 132Aand 132C is formed to be thick. By doing so, in the fourth configurationexample, in comparison with the first configuration example, the layerposition of the G photoelectric conversion portion including thephotoelectric conversion film 135, the lower electrode 134A, and theupper electrode 136 is moved to the position close to the on-chip lens139. As a result, the light-condensed spot diameter ϕG of incident lightin the G photoelectric conversion portion is increased in comparisonwith the first configuration example, the configuration example copeswith a wider range of incident angle.

In this manner, by adjusting the layer position of the G photoelectricconversion portion, the lens coverage of the G phase difference signaland the B phase difference signal (or R phase difference signal) can beadjusted.

14. Fifth Configuration Example of Pixel

A fifth configuration example of the pixel 100 of the solid-stateimaging device 1 according to the second embodiment will be describedwith reference to FIG. 32.

FIG. 32 illustrates a cross-sectional structure of a phase differencepixel 100P_(A) in the fifth configuration example.

In the fifth configuration example, two photoelectric conversionportions photoelectrically converting G light and B light are formedoutside the semiconductor substrate 12, and a photoelectric conversionportion photoelectrically converting R light is formed inside thesemiconductor substrate 12.

Specifically, a first photoelectric conversion portion photoelectricallyconverting G light is formed by a photoelectric conversion film 135, alower electrode 134A under the photoelectric conversion film, and anupper electrode 136 on the photoelectric conversion film, and below thephotoelectric conversion portion, and a second photoelectric conversionportion photoelectrically converting B light is formed by aphotoelectric conversion film 162, a lower electrode 161A under thephotoelectric conversion film, and an upper electrode 163 on thephotoelectric conversion film. The upper electrode 163, the lowerelectrode 134A of the first photoelectric conversion portion and theupper electrode 163 of the second photoelectric conversion portion areseparated from each other by the insulating film 164. The lowerelectrode 134A and the lower electrode 161A are formed only in theregion corresponding to the right half of the lower electrode 134 of thenormal pixel 100X.

Similarly to the contact portion 132P, the light shielding film 132A,and the conductive plug 121 in the first photoelectric conversionportion, the charges generated in the second photoelectric conversionportion are transferred to the front surface side (lower side in thefigure) of the semiconductor substrate 12.

As a material of the photoelectric conversion film 135 photoelectricallyconverting G light, as described above, for example, an organicphotoelectric conversion material including a rhodamine based dye, amelacyanine based dye, quinacridone, and the like may be used. As amaterial of the photoelectric conversion film 162 photoelectricallyconverting B light, as described above, for example, an organicphotoelectric conversion material including coumarin based dye,tris-8-hydrioxyquinoline Al (Alq3), a melacyanine based dye, and thelike may be used.

In addition, in the first conductive type (for example, P type)semiconductor region 111 in the semiconductor substrate 12, thesemiconductor region 112 corresponding to the photodiode PD1 of thefirst configuration example is omitted, and the semiconductor region 113corresponding to the photodiode PD2 is formed in the depth directionfrom the interface of the anti-reflective film 131 of the semiconductorsubstrate 12. The light reception region of the photodiode PD2 in theplanar direction becomes the right-half region of the semiconductorregion 112 by the light shielding film 132C.

In the fifth configuration example, in comparison of the sizes of thelight-condensed spot diameter among the three layers of thephotoelectric conversion portions for R, G, and B light, the positionsthereof in the height direction (depth direction) are different, andthus, the light-condensed spot diameter is increased in the order of theG photoelectric conversion portion, the B photoelectric conversionportion, and the R photoelectric conversion portion. By doing so, sincedegrees of light separation are classified into three steps, byappropriately selecting the phase difference signal obtained from eachof the photoelectric conversion portions, it is possible to cope with awide range of types of lenses ranging from the image forming lens 92having a short exit pupil distance to the image forming lens 92 having along exit pupil distance.

15. Example of Arrangement of Phase Difference Pixels

According to the pixel structure of the phase difference pixel 100Pemployed as the second embodiment of the solid-state imaging device 1,one pixel is provided with a plurality of the photoelectric conversionportions of which the light-condensed spot diameters are different, andit is possible to cope with a wide range of types of lenses ranging fromthe image forming lens 92 having a short exit pupil distance to theimage forming lens 92 having a long exit pupil distance. This point willbe described in detail with reference to figures.

For example, as illustrated in FIG. 33, the imaging region 181corresponding to the pixel array portion 3 is divided into a pluralityof auto-focusing (AF) areas 182. The AF area 182 is a unit ofcalculation of a defocus amount in the case of performing auto-focusing.For example, while attending to the defocus amount of one or more AFareas 182 in the imaging region 181, the position of the image forminglens 92 can be controlled.

FIG. 34 illustrates an example of arrangement of phase difference pixels100P included in one AF area 182 inside the imaging region 181.

In A of FIG. 34 to F of FIG. 34, a plurality of pixels 100 aretwo-dimensionally arranged in one AF area 182 in a matrix shape, andamong the plurality of the pixels 100 arranged in a matrix shape, therow of pixels where the phase difference pixels 100P (any one of100P_(A)and 100P_(B)) are arranged is indicated by a broken line. Inaddition, the entire pixels of the row of pixels indicated by the brokenline may be the phase difference pixels 100P, or an arrangement methodwhere the phase difference pixels 100P are arranged every several pixelsin the row of pixels indicated by the broken line may be used.

The phase difference pixel 100P according to the present disclosure iscompared with, for example, a phase difference pixel (hereinafter,referred to as a reference phase difference pixel) in a structure wherethe right or left half of a light reception region of a photodiode PDformed in the silicon layer is shielded by a light shielding film.

In the case of employing the reference phase difference pixel as astructure of the phase difference pixel, for example, as illustrated inA of FIG. 34, there has been need to classify the lens types of theinterchangeable-lens camera into ten steps ranging from “lens pupil 1”to “lens pupil 10” and to arrange the phase difference pixels wherepupil division is performed so as to correspond to each lens type in oneAF area 182. With respect to the “lens pupil 1” to “lens pupil 10”, asthe lens type goes in the order of “lens pupil 1”, “lens pupil 2”, “lenspupil 3”, . . . , the exit pupil distance of the image forming lens isincreased.

On the contrary, by employing the phase difference pixel 100P accordingto the present disclosure as the structure of the phase differencepixel, for example, as illustrated in B of FIG. 34, the lens types ofthe interchangeable-lens camera may be classified into five steps of“lens pupil A1”, “lens pupil A3”, “lens pupil A5”, “lens pupil A7”, and“lens pupil A9”, and the phase difference pixels 100P where pupildivision is performed so as to correspond to each of the image forminglenses are arranged in one AF area 182.

Herein, the “lens pupil A1” is a lens type which covers for example, the“lens pupil 1” and the “lens pupil 2” in A of FIG. 34, the lens pupilA3” is a lens type which covers for example, the “lens pupil 3” and the“lens pupil 4” in A of FIG. 34, the lens pupil A5” is a lens type whichcovers for example, the “lens pupil 5” and the “lens pupil 6” in A ofFIG. 34, the lens pupil A7” is a lens type which covers for example, the“lens pupil 7” and the “lens pupil 8” in A of FIG. 34, and the lenspupil A9” is a lens type which covers for example, the “lens pupil 9”and the “lens pupil 10” in A of FIG. 34.

Therefore, in this example, in comparison with the case of employing thereference phase difference pixel, since the phase difference pixels 100Pincludes a plurality of the photoelectric conversion portions of whichthe light-condensed spot diameters are different, the number of arrangedphase difference pixels 100P can be reduced to ½.

In addition, since the light-condensed spot diameter of the Gphotoelectric conversion portion in the phase difference pixel 100P isincreased, namely, since the range of the incident angle where thesensitivity is linearly changed is increased, for example, asillustrated in C of FIG. 34, the lens types of the interchangeable-lenscamera may be classified into four steps of “lens pupil B1”, “lens pupilB4”, “lens pupil B7”, and “lens pupil B10”, or as illustrated in D ofFIG. 34, the lens types of the interchangeable-lens camera may beclassified into three steps of “lens pupil C1”, “lens pupil C5”, and“lens pupil C9”.

As illustrated in C of FIG. 34, in a case where the lens types areclassified into four steps of “lens pupil B1”, “lens pupil B4”, “lenspupil B7”, and “lens pupil B10”, in comparison with the case ofemploying the reference phase difference pixel, the number of arrangedphase difference pixels 100P can be reduced to ⅖. In addition, asillustrated in D of FIG. 34, in a case where the lens types of theinterchangeable-lens camera are classified into three steps of “lenspupil C1”, “lens pupil C5”, and “lens pupil C9”, in comparison with thecase of employing the reference phase difference pixel, the number ofarranged phase difference pixels 100P can be reduced to 3/10.

However, as the range of incident angle where the sensitivity islinearly changed is widened and the slope of the sensitivity change isgentle, the light separation performance is deteriorated. Therefore, asillustrated in, for example, E of FIG. 34 and F of FIG. 34, a pluralityof rows of the phase difference pixels 100P corresponding to the samelens type are arranged, and addition signals of the plurality of rows ofthe phase difference pixels 100P corresponding to the same lens type areused for detection of the phase difference, so that it is also possibleto improve focus detection accuracy.

E of FIG. 34 illustrates an example where the lens types are classifiedinto three steps of “lens pupil C1”, “lens pupil C5”, and “lens pupilC9” and the number of arranged phase difference pixels 100Pcorresponding to one lens type is increased three times.

F of FIG. 34 illustrates an example where the lens type is configuredwith only one type (“lens pupil D5”) capable of coping with all theimage forming lenses 92 and the number of arranged phase differencepixels 100P is increased ten times.

16. Focus Control Process

A focus control process performed by the imaging device 90 where thesolid-state imaging device 1 according to the second embodiment ismounted as the solid-state imaging device 94 of FIG. 25 will bedescribed with reference to a flowchart of FIG. 35.

First, in step S1, the control circuit 95 detects lens ID identifyingthe mounted optical unit 91 (image forming lens 92 thereof) from theoptical unit 91.

In step S2, the control circuit 95 identifies an imaging format set by auser. The user can set the imaging format by selecting, for example, ahigh-resolution 4 K format where the number of pixels is about4000×about 2000 (horizontal direction×vertical direction), an HD formatwhere the number of pixels is about 2000×about 1000 (horizontaldirection×vertical direction), or the like.

In step S3, the control circuit 95 drives the solid-state imaging device94 to start imaging.

In step S4, the control circuit 95 selects a predetermined AF area fromthe AF areas 182 obtained by dividing the imaging region 181 (FIG. 33)by a predetermined number. For example, the AF area may be selected onthe basis of the AF area indicated by the user or may be selected on thebasis of features of the captured image such as an AF area including aface. In addition, all AF areas 182 corresponding to the entire imagingregion 181 may also be selected.

In step S5, the control circuit 95 determines the phase difference pixel100P which is to be used for focus detection on the basis of thedetected lens ID and the selected AF area. For example, in a case wherethe phase difference pixels 100P of three types of pupil division of the“lens pupil C1”, the “lens pupil C5”, and the “lens pupil C9”illustrated in D of FIG. 34 corresponding to the detected lens ID arearranged in the selected AF area 182, the control circuit 95 determinesthe phase difference pixel 100P of any one of the “lens pupil C1”, the“lens pupil C5”, and the “lens pupil C9” as the phase difference pixel100P used for focus detection on the basis of the detected lens ID.

In step S6, the control circuit 95 analyzes the difference between theleft and right signals of the G signal and the B signal in the selectedphase difference pixel 100P. Namely, the control circuit 95 acquires theleft opening signal and the right opening signal in the two phasedifference pixels 100P_(A) and 100P_(B) constituting a pair of pixelswith respect to the G signal having a large light-condensed spotdiameter of incident light and the B signal having a smalllight-condensed spot diameter of incident light and calculates a signaldifference (level difference) between the left opening signal and theright opening signal.

In step S7, since the signal having a smaller difference between theleft and right signals among the G signal and the B signal is used fordetecting the phase difference, the control circuit 95 determines whichone of the G signal and B signal has a larger difference between theleft and right signals.

In a case where it is determined in step S7 that the difference betweenthe left and right signals of the B signal is equal to or smaller thanthe difference between the left and right signals of the G signal, theprocess proceeds to step S8, and the control circuit 95 corrects thedifference between the left and right signals of the B signal so thatthe difference between the left and right signals of the B signal is atthe same level.

In step S9, the control circuit 95 detects the phase difference on thebasis of the left and right opening signals of the B signal of whichdifference between the left and right signals is corrected andcalculates an in-focus direction and a shift amount. As illustrated in Eof FIG. 34 or F of FIG. 34, in a case where plural rows of the lenstypes corresponding to the detected lens ID are arranged, the controlcircuit 95 detects the phase difference on the basis of the left andright opening signals obtained by adding the plural rows of signals withrespect to the left opening signal and the right opening signal. Bydoing so, it is possible to improve phase difference detection accuracy.

On the other hand, in a case where it is determined in step S7 that thedifference between the left and right signals of the B signal is largerthan the difference between the left and right signals of the G signal,the process proceeds to step S10, and the control circuit 95 correctsthe difference between the left and right signals of the G signal sothat the difference between the left and right signals of the G signalis at the same level.

In step S11, the control circuit 95 detects the phase difference on thebasis of the left and right opening signals of the G signal of whichdifference between the left and right signals is corrected andcalculates an in-focus direction and a shift amount. As illustrated in Eof FIG. 34 or F of FIG. 34, in a case where plural rows of the lenstypes corresponding to the detected lens ID are arranged, the controlcircuit 95 detects the phase difference on the basis of the left andright opening signals obtained by adding the plural rows of signals withrespect to the left opening signal and the right opening signal. Bydoing so, it is possible to improve phase difference detection accuracy.

After step S9 or step S11, in step S12, the control circuit 95 controlsthe movement of the image forming lens 92 on the basis of the calculatedin-focus direction and shift amount. Namely, the control circuit 95moves the image forming lens 92 by the calculated shift amount in thecalculated in-focus direction.

In the case of performing auto-focusing according to a contrast methodin addition to the phase difference auto-focusing, as step S13, thecontrol circuit 95 searches for the lens position where the change incontrast of the captured image is maximized by slightly moving the imageforming lens 92 forward and backward with reference to the lens positionafter the adjustment by the phase difference detection. In a case wherethe auto-focusing according to the contrast method is not performed, theprocess of step S13 is omitted.

Then, in step S14, the control circuit 95 determines a final in-focusposition and ends the process. In a case where the auto-focusingaccording to the contrast method is performed, the lens position wherethe change in contrast of the captured image is maximized is determinedas the final in-focus position. In a case where the auto-focusingaccording to the contrast method is not performed, the lens position towhich the image forming lens 92 is moved by the process of step S12 isdetermined as the final in-focus position.

As described above, according to the focus control process, since thesolid-state imaging device 94 (solid-state imaging device 1 according tothe second embodiment) of the imaging device 90 can acquire plural typesof phase difference signals (G signals and B signals) of which spotdiameters are different, the phase difference can be detected byselecting an optimal phase difference signal among the phase differencesignals.

In addition, according to the above-described focus control process,described is the example where the signal having a smaller differencebetween the left and right signals among the G signal and the B signalis used as the phase difference detection signal. However, the region inthe vicinity of the center of the imaging region 181, in other words,the region which is close to the center of the optical axis and wherethe image height is low is not easily influenced by the difference ofthe image forming lens 92. Therefore, in a case where the selected AFarea corresponds to the center region of the imaging region 181, the Bsignal having a high degree of light separation may be always allowed tobe used, and in a case where the selected AF area corresponds to theperipheral region of the imaging region 181, the signal having a smallerdifference between the left and right signals among the G signal and theB signal may be allowed to be used as the phase difference detectionsignal.

In addition, instead of using only one signal of the G signal and the Bsignal, a signal obtained by combining the G signal and a B signal at apredetermined ratio may be used as the phase difference detectionsignal. In this case, the combining ratio may be, for example, a valuepredefined for every selected AF area, a value according to the distancefrom the center of the imaging region 181 to the phase difference pixel100P, or the like.

17. Substrate Configuration Example of Solid-State Imaging Device>

As illustrated in A of FIG. 36, the solid-state imaging device 1 ofFIGS. 1 and 26 is configured so that a pixel region 221 where aplurality of pixels 2 or pixels 100 are arranged, a control circuit 222which controls the pixels 2 or the pixels 100, and a logic circuit 223which includes a signal processing circuit for pixel signals are formedon one semiconductor substrate 12.

However, as illustrated in B of FIG. 36, the solid-state imaging device1 may be formed in a stacked structure where a first semiconductorsubstrate 231 where a pixel region 221 and a control circuit 222 areformed and a second semiconductor substrate 232 where a logic circuit223 is formed are stacked. The first semiconductor substrate 231 and thesecond semiconductor substrate 232 are electrically connected to eachother, for example, by a through-via or metal bonding of Cu—Cu.

In addition, as illustrated in C of FIG. 36, the solid-state imagingdevice 1 may be formed in a stacked structure where a firstsemiconductor substrate 241 where only a pixel region 221 is formed anda second semiconductor substrate 242 where a control circuit 222 and alogic circuit 223 are formed are stacked. The first semiconductorsubstrate 241 and the second semiconductor substrate 242 areelectrically connected to each other, for example, by a through-via ormetal bonding of Cu—Cu.

In any substrate configuration of A of FIG. 36 to C of FIG. 36, by usingthe configuration according to each embodiment as the solid-stateimaging device 1, it is possible to improve phase difference detectionaccuracy. Therefore, with respect to the imaging device 90 such as avideo camera, a digital still camera, and a camera module for a mobiledevice such as a mobile phone, it is possible to obtain a captured imagewith a high image quality.

In the above-described examples, the solid-state imaging devices wherethe first conductive type is set as a P type, the second conductive typeis set as an N type, and electrons are set as signal charges aredescribed. However, the technique according to the present disclosuremay be applied to solid-state imaging device where holes are set assignal charges. Namely, by setting the first conductive type as an Ntype and setting the second conductive type as a P type, theabove-described semiconductor regions may be configured as thesemiconductor regions having the opposite conductive types.

The embodiments according to the present disclosure are not limited tothe above-described embodiments, but various changes are availablewithin the scope without departing from the spirit of the presentdisclosure.

For example, a mode as a combination of a portion of or all theplurality of the embodiments described above may be employed.

In addition, the effects disclosed in the specification are exemplarybut not limitative, and thus, there may be effects other than theeffects disclosed in the specification.

In addition, the present disclosure may have the followingconfigurations.

(1)

A solid-state imaging device including a pixel including a photoelectricconversion portion having a structure where a photoelectric conversionfilm is interposed by an upper electrode on the photoelectric conversionfilm and a lower electrode under the photoelectric conversion film,wherein the upper electrode is divided into a first upper electrode anda second upper electrode.

(2)

The solid-state imaging device according to (1), wherein differentvoltages are applied to the first upper electrode and the second upperelectrode.

(3)

The solid-state imaging device according to (2), wherein the differentvoltages are a first voltage allowing charges to be generated in thephotoelectric conversion film and a second voltage allowing charges notto be generated in the photoelectric conversion film.

(4)

The solid-state imaging device according to (3), wherein, after thefirst voltage is applied to the first upper electrode and the secondvoltage is applied to the second upper electrode, the first voltage isapplied to the second upper electrode and the second voltage is appliedto the first upper electrode.

(5)

The solid-state imaging device according to (3), wherein the secondvoltage is controlled so that a potential difference with respect to thelower electrode is constant.

(6)

The solid-state imaging device according to any of (1) to (5),

wherein a voltage for allowing charges to be generated in thephotoelectric conversion film is applied to the first upper electrodeand the second upper electrode, and

signals are output from the photoelectric conversion portions interposedby the first upper electrode and the lower electrode and by the secondupper electrode and the lower electrode.

(7)

The solid-state imaging device according to (6), wherein at least one ofa first signal output from the photoelectric conversion portioninterposed by the first upper electrode and the lower electrode and asecond signal output from the photoelectric conversion portioninterposed by the second upper electrode and the lower electrode is usedas a phase difference signal.

(8)

The solid-state imaging device according to any of (1) to (7), whereinthe pixel is a portion of pixels which are two-dimensionally arranged ina pixel array portion in a matrix shape.

(9)

The solid-state imaging device according to any of (1) to (8), whereinthe pixels are the entire pixels which are two-dimensionally arranged ina pixel array portion in a matrix shape.

(10)

The solid-state imaging device according to any of (1) to (9), whereinthe lower electrode also faces the first upper electrode and the secondupper electrode and is divided into a first lower electrode and a secondlower electrode.

(11)

The solid-state imaging device according to (10), wherein the pixelincludes a first charge retaining portion connected to the first lowerelectrode and a second charge retaining portion connected to the secondlower electrode.

(12)

The solid-state imaging device according to (11), wherein the pixelincludes a charge combining portion which combines charges retained inthe first charge retaining portion and charges retained in the secondcharge retaining portion.

(13)

The solid-state imaging device according to (12), wherein the pixelincludes switch elements between the first charge retaining portion andthe charge combining portion and between the second charge retainingportion and the charge combining portion.

(14)

The solid-state imaging device according to any of (1) to (8), whereinany one of the first upper electrode and the second upper electrode isformed so as to extend over an adjacent pixel.

(15)

The solid-state imaging device according to any of (1) to (14), whereinthe photoelectric conversion portion photoelectrically convertspredetermined color light.

(16)

The solid-state imaging device according to (15), wherein thephotoelectric conversion portion is formed outside the semiconductorsubstrate, and another photoelectric conversion portionphotoelectrically converting light of color different from color whichthe photoelectric conversion portion photoelectrically converts isfurther included inside the semiconductor substrate.

(17)

The solid-state imaging device according to any of (1) to (16), whereinthe photoelectric conversion portion photoelectrically converts lightwhich passes through a color filter.

(18)

The solid-state imaging device according to any of (1) to (17), whereinthe first upper electrode and the second upper electrode are formed soas to be symmetric with respect to an optical axis.

(19)

A method for driving a solid-state imaging device including a pixelincluding a photoelectric conversion portion having a structure where aphotoelectric conversion film is interposed by an upper electrode on thephotoelectric conversion film and a lower electrode under thephotoelectric conversion film, the upper electrode being divided into afirst upper electrode and a second upper electrode, the solid-stateimaging device applying different voltages to the first upper electrodeand the second upper electrode.

(20)

An electronic device including a solid-state imaging device including apixel including a photoelectric conversion portion having a structurewhere a photoelectric conversion film is interposed by an upperelectrode on the photoelectric conversion film and a lower electrodeunder the photoelectric conversion film, the upper electrode beingdivided into a first upper electrode and a second upper electrode.

(B1)

A solid-state imaging device including a first photoelectric conversionportion and a second photoelectric conversion portion of which positionsin a height direction in a pixel are different,

wherein at least one of the first photoelectric conversion portion andthe second photoelectric conversion portion is formed outside asemiconductor substrate, and

each of the first photoelectric conversion portion and the secondphotoelectric conversion portion outputs a phase difference signal.

(B2)

The solid-state imaging device according to (B1), wherein the firstphotoelectric conversion portion and the second photoelectric conversionportion are different in light-condensed spot diameter of incidentlight.

(B3)

The solid-state imaging device according to (B1) or (B2), wherein thefirst photoelectric conversion portion and the second photoelectricconversion portion are different in a degree of separation of incidentlight.

(B4)

The solid-state imaging device according to any one of (B1) to (B3),wherein the first photoelectric conversion portion is formed outside thesemiconductor substrate by a structure where a photoelectric conversionfilm is interposed by an upper electrode on the photoelectric conversionfilm and a lower electrode under the photoelectric conversion film.

(B5)

The solid-state imaging device according to (B4), wherein an electrodefilm which is formed in the same layer as that of the lower electrode ofthe first photoelectric conversion portion and which does not output thephase difference signal is connected to GND.

(B6)

The solid-state imaging device according to any one of (B1) to (B3),wherein the first photoelectric conversion portion and the secondphotoelectric conversion portion are formed outside the semiconductorsubstrate by a structure where a photoelectric conversion film isinterposed by an upper electrode on the photoelectric conversion filmand a lower electrode under the photoelectric conversion film.

(B7)

The solid-state imaging device according to (B4) or (B6), wherein thelower electrode is formed in a region which is asymmetric with respectto an optical axis of the incident light.

(B8)

The solid-state imaging device according to (B7), wherein the upperelectrode is formed in a region facing the lower electrode.

(B9)

The solid-state imaging device according to (B7) or (B8), wherein thephotoelectric conversion film is formed in a region facing the lowerelectrode.

(B10)

The solid-state imaging device according to (B4) or (B5), wherein thesecond photoelectric conversion portion is formed in the semiconductorsubstrate.

(B11)

The solid-state imaging device according to (B10), wherein a chargegeneration region of the second photoelectric conversion portion becomesa region which is asymmetric with respect to an optical axis of theincident light by a light shielding film.

(B12)

The solid-state imaging device according to any one of (B1) to (B11),further including a third photoelectric conversion portion in the pixel.

(B13)

A signal processing method for a solid-state imaging device including afirst photoelectric conversion portion and a second photoelectricconversion portion of which positions in a height direction in a pixelare different, at least one of the first photoelectric conversionportion and the second photoelectric conversion portion being formedoutside a semiconductor substrate, the signal processing methodincluding selecting at least one of phase difference signals output fromthe first photoelectric conversion portion and the second photoelectricconversion portion and detecting a phase difference.

(B14)

An electronic device including a solid-state imaging device,

wherein the solid-state imaging device includes a first photoelectricconversion portion and a second photoelectric conversion portion ofwhich positions in a height direction in a pixel are different,

at least one of the first photoelectric conversion portion and thesecond photoelectric conversion portion is formed outside asemiconductor substrate, and

each of the first photoelectric conversion portion and the secondphotoelectric conversion portion outputs a phase difference signal.

REFERENCE SIGNS LIST

-   1 Solid-state imaging device-   2 Pixel-   2X Normal pixel-   2P Phase difference pixel-   3 Pixel array portion-   4 Vertical driver circuit-   5 Column signal processing circuit-   7 Output circuit-   12 Semiconductor substrate-   45 b, 45 c Charge retaining portion-   52, 52A Photoelectric conversion film-   53 (53 a to 53 c) Lower electrode-   54 (54 a to 54 d) Upper electrode-   61 Control wire line-   63 b, 63 c MOS transistor-   64 Charge combining portion-   81 Color filter-   90 Imaging device-   91 Optical unit-   92 Image forming lens-   94 Solid-state imaging device-   95 Control circuit-   96 Signal processing circuit-   100 Pixel-   100X Normal pixel-   100P Phase difference pixel-   111 Semiconductor region-   112, 113 Semiconductor region-   PD1, PD2 Photodiode-   134, 134A Lower electrode-   135, 135A Photoelectric conversion film-   136, 136A Upper electrode-   132C, 132Q Light shielding film-   161A Lower electrode-   162 Photoelectric conversion film-   163 Upper electrode

What is claimed is:
 1. A solid-state imaging device, comprising: aphotoelectric conversion unit, comprising: a photoelectric conversionfilm; a first electrode; a second electrode; and a third electrode; atleast one photoelectric conversion region disposed in a semiconductorsubstrate; and an on-chip lens, wherein the photoelectric conversionfilm is disposed between the first electrode and the third electrode anddisposed between the second electrode and the third electrode, whereinthe photoelectric conversion unit is disposed between the on-chip lensand the semiconductor substrate, wherein the on-chip lens overlaps thefirst electrode, the second electrode, and one of the at least onephotoelectric conversion region in a plan view, wherein thephotoelectric conversion unit photoelectrically converts predeterminedcolor light, wherein the photoelectric conversion unit is formed outsidethe semiconductor substrate, and wherein another photoelectricconversion unit photoelectrically converts light of a color differentfrom the predetermined color light which the photoelectric conversionunit photoelectrically converts is further included inside thesemiconductor substrate.
 2. The solid-state imaging device according toclaim 1, wherein the first electrode and the second electrode constitutean upper electrode.
 3. The solid-state imaging device according to claim1, wherein different voltages are applied to the first electrode and thesecond electrode.
 4. The solid-state imaging device according to claim1, wherein a first voltage applied to the first electrode allows chargesto be generated in the photoelectric conversion film, and a secondvoltage applied to the second electrode allows charges not to begenerated in the photoelectric conversion film.
 5. The solid-stateimaging device according to claim 4, wherein, after the first voltage isapplied to the first electrode and the second voltage is applied to thesecond electrode, the first voltage is applied to the second electrodeand the second voltage is applied to the first electrode.
 6. Thesolid-state imaging device according to claim 4, wherein the secondvoltage is controlled so that a potential difference with respect to thethird electrode is constant.
 7. The solid-state imaging device accordingto claim 1, wherein a voltage for allowing charges to be generated inthe photoelectric conversion film is applied to the first electrode andthe second electrode, and signals are output from the photoelectricconversion unit.
 8. The solid-state imaging device according to claim 7,wherein at least one of a first signal output from the photoelectricconversion unit and a second signal output from the photoelectricconversion unit is used as a phase difference signal.
 9. The solid-stateimaging device according to claim 1, wherein the photoelectricconversion unit is one of multiple photoelectric conversion units, andthe multiple photoelectric conversion units are two-dimensionallyarranged in a matrix shape.
 10. The solid-state imaging device accordingto claim 1, wherein the third electrode faces the first electrode andthe second electrode and is divided into a first lower electrode and asecond lower electrode.
 11. The solid-state imaging device according toclaim 10, wherein a first charge retaining portion is connected to thefirst lower electrode and a second charge retaining portion is connectedto the second lower electrode.
 12. The solid-state imaging deviceaccording to claim 11, wherein a charge combining portion combinescharges, and the charge combining portion combines charges retained inthe first charge retaining portion and charges retained in the secondcharge retaining portion.
 13. The solid-state imaging device accordingto claim 12, further comprising: switch elements between the firstcharge retaining portion and the charge combining portion and betweenthe second charge retaining portion and the charge combining portion.14. The solid-state imaging device according to claim 1, wherein any oneof the first electrode and an upper electrode is formed so as to extendover an adjacent photoelectric conversion unit.
 15. The solid-stateimaging device according to claim 1, wherein the photoelectricconversion unit photoelectrically converts light which passes through acolor filter.
 16. The solid-state imaging device according to claim 1,wherein the first electrode and the second electrode are formed so as tobe symmetric with respect to an optical axis.
 17. A method for driving asolid-state imaging device including a photoelectric conversion unithaving a structure comprising a photoelectric conversion film disposedbetween a first electrode and a third electrode and disposed between asecond electrode and the third electrode, the photoelectric conversionunit disposed between an on-chip lens and a semiconductor substrate, andthe on-chip lens overlapping the first electrode, the second electrode,and one of multiple photoelectric conversion regions in a plan view,comprising: applying different voltages to the first electrode and thesecond electrode; photoelectrically converting predetermined color lightby the photoelectric conversion unit, wherein the photoelectricconversion unit is formed outside the semiconductor substrate; includinginside the semiconductor substrate, another photoelectric conversionunit photoelectrically; and converting light of a color different fromthe predetermined color light which the photoelectric conversion unitphotoelectrically converts by the another photoelectric conversion unit.18. An electronic device, comprising: a solid-state imaging deviceincluding: a photoelectric conversion unit having a structurecomprising: a photoelectric conversion film disposed between a firstelectrode and a third electrode and disposed between a second electrodeand the third electrode, the photoelectric conversion unit disposedbetween an on-chip lens and a semiconductor substrate, and the on-chiplens overlapping the first electrode, the second electrode, and one ofmultiple photoelectric conversion regions in a plan view, wherein thephotoelectric conversion unit photoelectrically converts predeterminedcolor light, wherein the photoelectric conversion unit is formed outsidethe semiconductor substrate, and another photoelectric conversion unitphotoelectrically converts light of a color different from thepredetermined color light which the photoelectric conversion unitphotoelectrically converts is further included inside the semiconductorsubstrate.
 19. The method according to claim 17, wherein the firstelectrode and the second electrode constitute an upper electrode. 20.The electronic device according to claim 18, wherein the first electrodeand the second electrode constitute an upper electrode.